Ionized pvd device for improved filling uniformity

Abstract

The invention provides an ionized PVD device capable of improving filling uniformity, which includes a chamber, a sputtering assembly, a base and an ion regulator; the sputtering assembly is located at the top of the chamber, the base is located in the chamber, and the ion regulator is located in the chamber Inside the body, and located between the sputtering assembly and the base; the ion adjuster includes a plurality of magnetic field adjustment units, which are spaced apart from each other and distributed radially outward from the center of the cavity; the magnetic field adjustment unit includes a sheet One of the shape magnets and electromagnetic coils, the surface magnetic field strength of the sheet magnets gradually increases along the direction away from the center of the cavity, and the magnetic pole faces of the adjacent sheet magnets are opposite. The improved structural design of the present invention, in A counterclockwise horizontal magnetic field is formed in the fan-shaped gap between the magnetic field adjustment units of the ion regulator to generate a force, which can make metal cations move from the middle and half-middle areas of the fan-shaped gap to the edge area, thereby increasing the edge ion concentration and deep hole filling uniformity.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device, in particular to an ionized PVD device capable of improving filling uniformity. Background technique [0002] Magnetron sputtering, also known as physical vapor deposition (PVD), is a widely used method for depositing metal films and other related materials in the manufacturing process of integrated circuits, and is the main technology for filling through silicon vias (TSV). In the process of filling TSVs with traditional PVD technology, metal ions are scattered onto the wafer at a certain angle, but for TSVs with high aspect ratios, the scattered metal ions cannot effectively enter the inside of the vias, resulting in the bottom of the vias and poor sidewall film coverage. The existing PVD deep hole deposition technology is to form a negative bias voltage on the base of the magnetron sputtering equipment to attract plasma. The higher ...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide an ionization PVD device that can improve the filling uniformity, which is used to solve the problem that the existing PVD device easily causes uneven filling of deep holes when filling deep holes sexual issues

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