Electric leakage test structure and electric leakage test method

Abstract

The invention provides an electric leakage test structure and an electric leakage test method. the electric leakage test structure comprises a substrate, and a first well region and a second well region are formed in the substrate; and the electric leakage test structure further comprises a first shallow trench isolation structure formed between the second well region and the first well region, a first source and drain region formed in the first well region, a plurality of second source and drain regions formed in the second well region and a test grid electrode formed on the substrate. In the electric leakage test method, the design sizes of the plurality of electric leakage test structures are different, and each electric leakage test structure is tested, so that the leakage current in each electric leakage test structure can be obtained; and the corresponding relation between the design size and the leakage current in the electric leakage test structure is obtained according to the leakage current in each electric leakage test structure, so that the problems of parasitic electric leakage and the like caused by the internal design of the semiconductor device can be reflected.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a leakage test structure and a leakage test method. Background technique [0002] Semiconductor technology In the design of integrated circuits or the development of process technology platforms, it is usually necessary to use a variety of leakage test structures to reflect whether the circuit design and process capabilities of semiconductor devices are normal. Different leakage test structures can reflect different device characteristics. The characteristics improve circuit design or process in semiconductor devices. Leakage is a problem that cannot be ignored in semiconductor devices, especially the parasitic leakage of semiconductor devices. [0003] When testing the leakage of semiconductor devices, usually such as figure 1 The leakage test structure shown (more leakage test structures currently used in the industry), the leakage test structure incl...

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Problems solved by technology

[0004] The purpose of the present invention is to provide a leakage test structure and a leakage test method to solve the problem that the existing leakage test structure cannot reflect the parasitic leakage caused by the internal design of the semiconductor device

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