Unlock instant, AI-driven research and patent intelligence for your innovation.

Leakage test structure and leakage test method

A test structure and test method technology, applied in the field of integrated circuit manufacturing, can solve problems such as inability to reflect parasitic leakage in the internal design of semiconductor devices

Active Publication Date: 2021-10-12
GUANGZHOU CANSEMI TECH INC
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a leakage test structure and a leakage test method to solve the problem that the existing leakage test structure cannot reflect the parasitic leakage caused by the internal design of the semiconductor device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Leakage test structure and leakage test method
  • Leakage test structure and leakage test method
  • Leakage test structure and leakage test method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The leakage test structure and leakage test method proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0023] figure 2 It is a top view of the leakage test structure not including the first shallow trench isolation structure and the second shallow trench isolation structure provided by the embodiment of the present invention, image 3 It is a top view of the leakage test structure including the first shallow trench isolation structure and the second shallow trench isolation structure provided by the embodiment of the present invention, namely figure 2 T...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a leakage test structure and a leakage test method. The leakage test structure includes a substrate in which a first well region and a second well region are formed; A first shallow trench isolation structure between the second well region and the first well region, a first source and drain region formed in the first well region, a plurality of The second source and drain regions and the test gate are formed on the substrate. In the leakage test method, the design dimensions of a plurality of the leakage test structures are different, and each of the leakage test structures is tested, the leakage current in each of the leakage test structures can be obtained, and the leakage current in each of the leakage test structures can be obtained. The leakage current in the leakage test structure obtains the corresponding relationship between the design size and the leakage current in the leakage test structure, which can further reflect problems such as parasitic leakage caused by the internal design of the semiconductor device.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a leakage test structure and a leakage test method. Background technique [0002] Semiconductor technology In the design of integrated circuits or the development of process technology platforms, it is usually necessary to use a variety of leakage test structures to reflect whether the circuit design and process capabilities of semiconductor devices are normal. Different leakage test structures can reflect different device characteristics. The characteristics improve circuit design or process in semiconductor devices. Leakage is a problem that cannot be ignored in semiconductor devices, especially the parasitic leakage of semiconductor devices. [0003] When testing the leakage of semiconductor devices, usually such as figure 1 The leakage test structure shown (more leakage test structures currently used in the industry), the leakage test structure incl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/544H01L21/66G01R31/52
CPCH01L22/34H01L23/544H01L22/14H01L22/20G01R31/52G01R31/3008
Inventor 陈泽勇周正良
Owner GUANGZHOU CANSEMI TECH INC