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A secondary electron probe and a high temperature scanning electron microscope

An electron microscope and secondary electron technology, applied in the direction of circuits, discharge tubes, electrical components, etc., can solve problems such as the impact of monitoring effects, and achieve the effect of avoiding impact and ensuring collection

Active Publication Date: 2022-07-29
浙江祺跃科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the grid structure adopted by the electron incident end of the high-temperature secondary electron detector collection component can still make a large amount of visible light and infrared rays incident, which still has a certain impact on the monitoring effect

Method used

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  • A secondary electron probe and a high temperature scanning electron microscope
  • A secondary electron probe and a high temperature scanning electron microscope
  • A secondary electron probe and a high temperature scanning electron microscope

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] like Figure 1-Figure 2 As shown, this embodiment provides a secondary electron probe 16, which includes a high-voltage electron tube 1 arranged at the electron inlet end, and the high-voltage electron tube 1 includes an inner collection layer 2 and an outer collection layer 3 that are oppositely arranged, and the outer collection layer 3 The circumferential angle of the Adjustable installation on the inner collection layer 2; a rotating shaft can be set between the inner collection layer 2 and the outer collection layer 3, the outer collection layer 3 is installed on the inner collection layer 2 through the rotating shaft, and the outer collection layer 3 can be opposite to the inner collection layer 2 Rotate to realize the relative angle adjustment; the inner collection layer 2 and the outer collection layer 3 can also be set to be circular, the outer collection layer 3 is sleeved on the side wall of the inner collection layer 2, and the side of the inner collection la...

Embodiment 2

[0036] like Figure 1-Figure 4 As shown, this embodiment provides a high-temperature scanning electron microscope, including an electron microscope chamber 13, an XYZ mobile stage 14 arranged in the electron microscope chamber 13, and an electron gun 15 arranged outside the electron microscope chamber 13 and communicated with the electron microscope chamber 13 , the secondary electron probe 16 in the first embodiment; the XYZ moving stage 14 is provided with a high temperature stretching stage, when in use, the test sample is placed on the high temperature stretching stage, and the test sample is heated by the high temperature stretching stage, To realize the mechanical property test of the test sample in a high temperature environment, the secondary electron probe 16 collects and detects the secondary electrons in the high temperature state, which can avoid the influence of visible light and infrared rays on the imaging, and can still achieve a high temperature under the high ...

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Abstract

The invention discloses a secondary electron probe and a high-temperature scanning electron microscope. The secondary electron probe comprises a high-voltage electron tube, and the high-voltage electron tube comprises an inner collection layer and an outer collection layer arranged oppositely, and the outer collection layer is installed with an adjustable circumferential angle for the inner collection layer On the layer, there is a gap between the inner collection layer and the outer collection layer. Several electron collection holes are distributed on both the inner collection layer and the outer collection layer. The electron collection holes on the inner collection layer and the outer collection layer are correspondingly arranged, and adjacent electron collection There is a shielding portion between the holes, and the area of ​​the shielding portion is not smaller than the area of ​​the electron collecting holes arranged on the inner collecting layer or the outer collecting layer oppositely. In the normal temperature environment, the electron collection holes on the inner collection layer and the outer collection layer are opposite to collect secondary electrons to the greatest extent. In the high temperature environment, the outer collection layer is rotated to the shielding part to completely shield the electron collection holes on the inner collection layer. state, so as to block a large amount of visible light and infrared light to avoid the influence of visible light and infrared light.

Description

technical field [0001] The invention relates to the technical field of electron microscopes, in particular to a secondary electron probe and a high-temperature scanning electron microscope. Background technique [0002] With the rapid development of materials science and technology, how to characterize the various physical, chemical and mechanical properties of materials, structures and devices under the action of high temperature fields from a microscopic perspective has become a research frontier and hotspot in the field of materials science and technology. Therefore, research inventions are based on high temperature scanning The test system of electron microscope is particularly important in seeking new materials, new technologies and new processes. [0003] In a high temperature environment, the sample to be tested will generate a large amount of visible light and infrared rays, which will affect the detection effect of the secondary electron probe. The scanning electro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/073H01J37/26
CPCH01J37/26H01J37/073
Inventor 张跃飞张泽屠金磊唐亮王飞王晋张宜旭刘陵恩
Owner 浙江祺跃科技有限公司