Magnetic memory and preparation method thereof

A technology of magnetic memory and direction of magnetic moment, which is applied in the fields of magnetic field-controlled resistors, parts of electromagnetic equipment, and the manufacture/processing of electromagnetic devices, etc. The effect of reducing and improving stability

Active Publication Date: 2021-08-24
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the existing MRAM still needs to be improved in the stability of information storage

Method used

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  • Magnetic memory and preparation method thereof
  • Magnetic memory and preparation method thereof
  • Magnetic memory and preparation method thereof

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preparation example Construction

[0073] The embodiment of the present invention also provides a method for preparing a magnetic memory, see Figure 4 , the method includes the steps of:

[0074] Step 401, forming a spin-orbit coupling layer, the spin-orbit coupling layer is used to generate spin-polarized carriers;

[0075] Step 402, forming an insertion layer on the spin-orbit coupling layer, the insertion layer has in-plane magnetic anisotropy, and the easy magnetization axis of the insertion layer is compatible with the spin polarization carrier of the spin-orbit coupling layer. The polarization direction of the current flow is roughly parallel;

[0076] Step 403 , forming a magnetic tunnel junction on the insertion layer, and a free ferromagnetic layer in the magnetic tunnel junction is disposed adjacent to the insertion layer.

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Abstract

A magnetic memory disclosed by the embodiment of the present invention comprises a spin-orbit coupling layer, an insertion layer and a magnetic tunnel junction which are stacked in sequence, the spin-orbit coupling layer is used for generating spin polarized carriers; the magnetic tunnel junction comprises a free ferromagnetic layer; and the free ferromagnetic layer is adjacent to the insertion layer, wherein the insertion layer has in-plane magnetic anisotropy, and an easy magnetization axis of the insertion layer is approximately parallel to the polarization direction of the spin polarization carriers of the spin-orbit coupling layer. The insertion layer plays a role of a spin current switch in the magnetic memory, so that the influence of leakage current on the magnetic tunnel junction in a non-writing state can be effectively reduced, the stored information is protected, and the stability of a device is improved. Besides, the insertion layer is made of a material with in-plane magnetic anisotropy, so that magnetization overturning of the free ferromagnetic layer can be realized without an additional auxiliary field, and the miniaturization of the device and the reduction of power consumption are facilitated.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a magnetic memory and a preparation method thereof. Background technique [0002] Magnetic memory (Magnetoresistance Random Access Memory, MRAM) is a novel non-volatile solid-state magnetic memory obtained according to the magnetoresistance effect, and it is one of the most commercially promising spintronic products at present. As the tunneling magnetoresistance technology of spin tunneling junction (Magnetic Tunneling Junction, MTJ) matures day by day, researchers expect more and more for MRAM. [0003] However, the stability of information storage in the existing MRAM still needs to be improved. Contents of the invention [0004] In view of this, the embodiments of the present invention provide a magnetic storage device and a manufacturing method thereof to solve at least one problem existing in the background art. [0005] In order to achieve the above object, technical sol...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/02H01L43/12
CPCH10N50/80H10N50/10H10N50/01
Inventor 彭文林刘峻杨海波付志成刘广宇
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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