Mask and method of coating film on memory device
A storage device and mask technology, which is applied to electric solid-state devices, semiconductor devices, sputtering plating, etc., can solve the problems of time-consuming consumables, difficult operation, etc., to save materials, reduce operation difficulty, and save coating time. Effect
Active Publication Date: 2022-07-01
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
However, this method has some disadvantages: when there are many circuits around the target area, a large area of insulating film 701 needs to be plated, which is difficult to operate and consumes time and consumables
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[0047] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0048] In the description of the present invention, it should be noted that the orientations or positional relationships indicated by the terms "upper", "lower", "inside", "outside", etc. are based on the orientations or positional relationships shown in the accompanying drawings, only for the purpose of It is for the convenience of describing the invention and simplifying the description, rather than indicating or implying that the d...
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Abstract
The present application provides a mask and a method for coating a memory device. The method includes: providing a mask; corresponding to the same group of contact plugs to be led on the storage device, determining two corresponding conductive film plating areas on the storage device; using the mask to shield the to-be-masked area on the storage device ; Coating a conductive film in the area where the storage device is exposed to the first hollowed-out area of the mask; in the storage device exposed to the second hollowed-out area corresponding to the contact plug to be led, between the conductive film and its corresponding contact plug to be led Insulating film is plated on the path between the storage devices; when the memory device is exposed to the first hollow area and / or the second hollow area, a wire is plated on the path between the conductive film and its corresponding contact plug to be led, so as to connect the contact to be led The plugs are electrically connected to their corresponding conductive films. The method for coating a film on a storage device utilizes a mask to mask the to-be-masked area on the storage device, which can reduce the difficulty of operation and save time and materials.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a mask and a method for coating a memory device. Background technique [0002] 3D NAND memory device is an emerging type of three-dimensional memory device that solves the problem of limited storage capacity of 2D or planar NAND memory devices by stacking memory chips together. 3D NAND memory devices have multiple layers of data storage cells stacked vertically, and their wordline lengths are extremely large, even several millimeters, compared to other memory devices. Therefore, the 3D NAND memory device is prone to word-line-related problems (such as short-circuit type failures between word-line layers and between word-lines and sources) during the production process. Then, when the 3D NAND memory device fails, the grab failure point (referred to as the grab point) is particularly important. [0003] In the process of picking up the point, it is necessary to appl...
Claims
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IPC IPC(8): C23C14/04C23C14/08C23C14/18C23C14/34H01L27/11529H01L27/11551H01L27/11573H01L27/11578H10B41/20H10B41/41H10B43/20H10B43/40
CPCC23C14/042C23C14/3435C23C14/185C23C14/08H10B41/41H10B41/20H10B43/40H10B43/20
Inventor 陈博才
Owner YANGTZE MEMORY TECH CO LTD