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Method for manufacturing semiconductor structure

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as increasing the resistance value of metal silicides and reducing the performance of semiconductor structures.

Active Publication Date: 2021-08-31
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the inventors found that the metal silicide prepared in the existing preparation process has oxides, which will increase the resistance value of the metal silicide, thereby reducing the performance of the semiconductor structure

Method used

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  • Method for manufacturing semiconductor structure
  • Method for manufacturing semiconductor structure
  • Method for manufacturing semiconductor structure

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Embodiment Construction

[0025] It can be seen from the background art that the product yield of the existing semiconductor structure still needs to be improved. figure 1 and figure 2 It is a structural schematic diagram corresponding to each step of a manufacturing method of a semiconductor structure. image 3 yes figure 2 The corresponding time-temperature schematic diagram.

[0026] combine figure 1 and figure 2 , to analyze the manufacturing method of the semiconductor structure:

[0027] refer to figure 1 , a substrate 100 is provided, and the substrate 100 includes a metal layer 102 and an oxide 103 on the surface of the metal layer 102 .

[0028] The base 100 also includes a substrate 101 and a dielectric layer 105 on the surface of the substrate 101 , and a trench 104 exposing the substrate 101 is located in the adjacent dielectric layer 105 , and the metal layer 102 is located on the substrate 101 in the trench 104 .

[0029] refer to figure 2 , for the substrate 100 (reference f...

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Abstract

The invention discloses a method for manufacturing a semiconductor structure, which comprises the following steps of providing a substrate which comprises a metal layer and an oxide positioned in or on the surface of the metal layer, and carrying out heat treatment on the substrate, introducing a reducing gas in the heat treatment process, and converting the metal layer into a metal compound layer after the heat treatment. The performance of the semiconductor structure can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a semiconductor structure. Background technique [0002] In the semiconductor structure, metal silicide is widely used in the contact electrode of the drain-source-gate region and the local interconnection between devices, so as to obtain a lower contact resistance in the source-drain-gate region, thereby reducing the RC delay of the semiconductor structure and improving Properties of semiconductor structures. [0003] However, the inventors found that the metal silicide prepared in the existing manufacturing process has oxides, and the oxides will increase the resistance value of the metal silicide, thereby reducing the performance of the semiconductor structure. Contents of the invention [0004] The purpose of the present invention is to provide a method for manufacturing a semiconductor structure to improve the performance of the semico...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
CPCH01L21/76889H01L2221/1068H01L21/28518H01L21/76814H01L21/76843H01L21/76855H01L21/76805H01L21/76865H01L21/76895
Inventor 晏陶燕
Owner CHANGXIN MEMORY TECH INC
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