Semiconductor light emitting diode and preparation method thereof
A technology of light-emitting diodes and semiconductors, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as defects, easy peeling and covering of metal reflective layers, etc.
Active Publication Date: 2021-09-07
XIAMEN SANAN OPTOELECTRONICS CO LTD
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Problems solved by technology
[0006] The problem solved by the present invention is to provide a semiconductor light-emitting diode and its preparation method, which can improve the situation that the metal reflective layer inside the semiconductor light-emitting diode is easy to peel off and poor coverage, the current spreading efficiency is better, and the brightness is improved
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[0039] In the existing semiconductor light-emitting diodes, the end of the metal reflective layer is prone to roll-up anomalies, resulting in problems such as peeling off and poor coverage. For this reason, the present invention provides a new semiconductor light-emitting diode and its preparation method to solve the corresponding disadvantages.
[0040] For a clearer representation, the present invention will be described in detail below in conjunction with the accompanying drawings.
[0041] Please refer to Figure 1~2 , an embodiment of the present invention provides a flip-chip light emitting diode, including a semiconductor light emitting stack (not marked) on a substrate 100, the semiconductor light emitting stack includes a first conductivity type semiconductor layer 110 on the substrate 100, located on the second A light-emitting layer on the semiconductor layer of one conductivity type 110 , the light-emitting layer is a quantum well layer 120 , and a semiconductor l...
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Abstract
The invention relates to a semiconductor light emitting diode, which comprises a semiconductor light-emitting laminated layer with a first surface. A transparent conductive layer, a first insulating layer and a metal reflecting layer are sequentially stacked above the first surface. The semiconductor light emitting diode further comprises the first insulating layer, the first insulating layer is provided with an upper surface and a lower surface which are opposite to each other on the transparent conductive layer, and the upper surface of the first insulating layer is divided into a first upper surface, a second upper surface and an inclined upper surface connecting the first upper surface and the second upper surface. The inclination angle of the inclined upper surface relative to the first upper surface is greater than or equal to 120 degrees. The first upper surface has a height difference relative to the second upper surface, so that the thickness of the first insulating layer between the first upper surface and the lower surface is smaller than that of the first insulating layer between the second upper surface and the lower surface.
Description
technical field [0001] The invention relates to the technical field of semiconductor solid lighting, in particular to a semiconductor light emitting diode and a preparation method thereof. Background technique [0002] Commercialized semiconductor light-emitting diode (LED) packaging, at the beginning, mostly uses gold wires to connect the PN junction of the chip to the positive and negative poles of the bracket. However, there are failure problems such as large light attenuation, light quenching and heat dissipation in the formal structure, which restricts its development. For this reason, researchers in the industry have successively developed vertical-structure semiconductor light-emitting diodes and flip-chip semiconductor light-emitting diodes. [0003] Compared with the formal semiconductor light emitting diode, the vertical semiconductor light emitting diode structure can improve the heat dissipation efficiency. For a vertical semiconductor light-emitting diode, two...
Claims
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Login to View More IPC IPC(8): H01L33/20H01L33/46H01L33/00
CPCH01L33/20H01L33/46H01L33/005
Inventor 朱秀山李燕
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD