A growth method of centimeter-sized hexagonal boron nitride single crystal

A hexagonal boron nitride and growth method technology, which is applied in the field of single crystal material preparation, can solve the problems of time-consuming and labor-intensive, low probability of success, etc., and achieve the effects of safety, stable cost, high success rate, and easy acquisition

Active Publication Date: 2022-03-04
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The process is time-consuming and labor-intensive with a low chance of success

Method used

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  • A growth method of centimeter-sized hexagonal boron nitride single crystal
  • A growth method of centimeter-sized hexagonal boron nitride single crystal
  • A growth method of centimeter-sized hexagonal boron nitride single crystal

Examples

Experimental program
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Effect test

Embodiment 1

[0045] Take 60g of smelted alloy, the alloy ratio see Figure 5 . Using hexagonal boron nitride powder as raw material (hexagonal boron nitride powder with a particle size of 1 micron produced by Shanghai Sinopharm Reagent), the mass ratio of hexagonal boron nitride powder to alloy is 1:30. Put 0.4g carbon powder to remove excess oxygen in the system. refer to figure 1 , put the hexagonal boron nitride powder 4 into the alumina crucible 3, put the alloy 5 on the hexagonal boron nitride powder 4, put the alumina crucible boat 3 into the heating temperature zone of the tube furnace. Close the inlet and outlet flange valves at both ends of the furnace tube, and use a vacuum pump to evacuate the CVD furnace tube 2 to a vacuum until the air pressure is 5*10 -2 Below Pa, after pumping, continue to pass nitrogen flow 1 to normal pressure, repeat 5 times to remove the air in the furnace tube, and finally pass nitrogen flow 1 for protection, and the flow rate is 200 sccm. Heat the ...

Embodiment 2

[0051] The XRF composition test of the alloy used is as Figure 7 shown. Repeat the experimental process as described in Example 1, the grown single crystal size is about 0.7-1cm, and the Raman spectrum test is as follows Image 6 As shown, the Raman shift is located at about 1366.15cm -1 , the width at half height is about 7.93cm -1 .

Embodiment 3

[0053] The XRF composition test of the alloy used is as Figure 9 shown. Repeat the experimental process as described in Example 1, the grown single crystal size is about 0.5-0.7cm, and the Raman spectrum test is as follows Figure 8 As shown, the Raman shift is located at about 1366.16cm -1 , about 7.85cm wide at half height -1 .

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Abstract

The present invention is a method for growing a centimeter-sized hexagonal boron nitride single crystal. The specific process of the preparation method is as follows: in a nitrogen flow, a ternary alloy with a certain proportion is placed on the hexagonal boron nitride powder, and first heated at a high temperature The alloy is melted, kept for a period of time, and then cooled at a very low speed. During the process of maintaining high temperature and slow cooling, crystals will grow on the surface of the metal alloy, and finally grow a large area of ​​high-quality hexagonal boron nitride single crystal. At present, the main problem hindering the research of two-dimensional material hexagonal boron nitride is that it is difficult to prepare high-quality and high-yield bulk single crystals, and the cost is high. However, this method has a simple structure, and its key process is the alloy composition and proportion. The alloy composition used in this method is mainly There are three kinds of iron, nickel, and chromium. In the case of stable ratio, the growth effect is remarkable and the cost is low. It has great positive significance for promoting the wide application of hexagonal boron nitride. Development also has some inspiration.

Description

technical field [0001] The invention belongs to the technical field of single crystal material preparation, and in particular relates to a method for growing a large-size hexagonal boron nitride single crystal. Background technique [0002] With the continuous development of research in the field of integrated circuits and semiconductors, the size of transistors has gradually decreased, which also means that the realization of Moore's Law has gradually slowed down and is approaching the limit. Ultrathin two-dimensional materials offer the possibility to extend Moore's law and have great potential. Two-dimensional semiconductor materials refer to materials in which electrons can only move freely on the non-nano scale in two dimensions, and can also be understood as materials in which electrons move in a plane. In the process of semiconductor device research, one of the key issues is how to avoid the formation of charge scattering and trap sites between adjacent dielectrics i...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): C30B9/10C30B29/38
CPCC30B9/10C30B29/38
Inventor万能张思源田明陈若望施辉王明渊
OwnerSOUTHEAST UNIV