Highly-textured oriented phase change storage material and preparation method thereof

A phase change storage and texture technology, applied in the growth of polycrystalline materials, chemical instruments and methods, from condensed steam, etc., can solve the problems of high switching energy conversion of phase change memory, and achieve improved switching efficiency, low power consumption, high power consumption, etc. The effect of the number of cycles of erasing and writing

Pending Publication Date: 2021-09-24
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a highly textured oriented phase change memory material and its preparation method, which solves the current situation of relatively high switching energy conversion of phase change memory in the prior art

Method used

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  • Highly-textured oriented phase change storage material and preparation method thereof
  • Highly-textured oriented phase change storage material and preparation method thereof
  • Highly-textured oriented phase change storage material and preparation method thereof

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Embodiment 1

[0023] (1) The base silicon wafer is successively cleaned in acetone and alcohol solutions for 10 minutes under the action of ultrasonic waves, and then baked in an environment of 120° C. for 20 minutes. Then use the method of magnetron sputtering to etch the substrate; the background vacuum is better than 5×10 during etching -5 Pa, the sputtering pressure is 0.4Pa, the sputtering power is 20w, and the reaction chamber temperature is 300°C.

[0024] (2) In the same sputtering environment, deposit a layer of 10nm thick Sb on the silicon wafer by magnetron sputtering 2 Te 3 Van der Waals structured buffer. The background vacuum is better than 5×10 during sputtering -5 Pa, the sputtering pressure is 0.4Pa, and the reaction chamber temperature is 300°C.

[0025] (3) In the same sputtering environment, the method of magnetron sputtering is used to sequentially deposit Bi 2 Te 3 (or Bi 2 Se 3 ) and GeTe layer materials to obtain a superlattice structure. The background vacu...

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Abstract

The invention relates to a highly-textured oriented phase change storage material and a preparation method thereof. The phase change storage material comprises a Van der Waals structure buffer layer and a nitrogen-sulfur compound-GeTe superlattice structure, and the superlattice structure grows in a layered mode in the direction perpendicular to the surface of the substrate. The nitrogen-sulfur compound phase-change material with continuous component distribution and high texture orientation is realized by using a high-throughput preparation method, and the phase-change storage material has high texture orientation, so that a low-power-consumption and high-performance phase-change storage unit with an interface disordering characteristic can be designed; and the highly-textured oriented phase change storage material is expected to be used in nonvolatile memory devices with high speed, high cycle erase times and low power consumption.

Description

technical field [0001] The invention belongs to the field of microelectronic integrated circuits, in particular to a highly textured orientation phase-change storage material and a preparation method thereof. Background technique [0002] Phase-change memory is based on reversible structural transitions between amorphous and crystalline states of chalcogenide materials. By exploiting Joule heating or optical heating, the structural changes provide a striking contrast between the optical and electrical properties of chalcogenides making them suitable for nonvolatile data storage and tunable photonics applications. However, facing the increasingly large data generated and transmitted by devices such as the Internet of Things and wireless networks. Current storage technologies are facing major challenges in dealing with the storage, transmission and access of massive data. Phase change memory also faces some technical difficulties due to its own limitations. For example, phas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00C30B29/68C30B29/46C30B23/02
CPCC30B29/68C30B29/46C30B23/025H10N70/8825H10N70/026H10N70/8828
Inventor 周夕淋朱栩旭宋志棠宋三年吴良才
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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