Light-emitting diode and manufacturing method thereof, and display screen
A technology of light-emitting diodes and manufacturing methods, which is applied to electrical components, circuits, semiconductor devices, etc., and can solve the problems of difficult circuit design of display panels and low color conversion efficiency of quantum dots, etc.
Active Publication Date: 2021-09-28
CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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Problems solved by technology
[0004] In view of the deficiencies in the prior art above, the purpose of this application is to provide an epitaxial substrate, a light-emitting diode and a method for manufacturing the light-emitting diode, which aims to solve the difficulties in the circuit design of the display panel and the color conversion efficiency of quantum dots in the prior art. not high problem
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[0071] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Preferred embodiments of the application are shown in the accompanying drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the application more thorough and comprehensive.
[0072] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terminology used herein in the description of the application is only for the purpose of describing specific embodiments, and is not intended to limit the application.
[0073] A general LED structure has an epitaxial substrate, a light-emitting unit ...
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Abstract
The invention discloses a light-emitting diode which comprises a first contact electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a current diffusion layer and a second contact electrode which are successively stacked, a plurality of microstructures and quantum dots; the plurality of microstructures penetrate through the light-emitting layer and the second semiconductor layer in the stacking direction of the light-emitting layer and the second semiconductor layer, each microstructure is provided with a drilling space, and the two opposite ends of each drilling space are sealed by the first semiconductor layer and the current diffusion layer respectively; and the quantum dots are filled in the drilling spaces of the plurality of microstructures. Part of blue light emitted by the microstructures excites the quantum dots to emit light of corresponding colors, so that the light-emitting layer can emit white light in a mixed mode; in addition, the microstructures can improve the color conversion efficiency due to the surface area effect, and then the full-color efficiency is improved. The invention further discloses a manufacturing method of the light-emitting diode and a display screen.
Description
technical field [0001] The present application relates to the technical field of semiconductors, and in particular to a light emitting diode, a manufacturing method of the light emitting diode and a display screen with the light emitting diode. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is a semiconductor device that can convert electrical energy into light energy. A general LED structure has an epitaxial substrate, a light emitting unit formed on the epitaxial substrate, and a light emitting unit that can provide electrical energy to the light emitting unit. The electrode unit, when the outside provides electric energy to the light-emitting unit through the electrode unit, the light-emitting unit will emit light outward. At present, GaN-based LEDs are receiving more and more attention and research. For example, the light-emitting unit is manufactured by epitaxially growing GaN on an epitaxial substrate made of sapphire. Therefore, the ...
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IPC IPC(8): H01L33/12H01L33/24H01L33/06H01L33/00
CPCH01L33/24H01L33/06H01L33/12H01L33/0075
Inventor 杨顺贵林雅雯黄嘉宏黄国栋
Owner CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD