Micro light-emitting diode, manufacturing method thereof, and display panel
A technology for light-emitting diodes and a manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as restricting the development of MicroLED technology, and achieve the effects of reducing optical crosstalk, reducing lateral light, and increasing reliability.
Active Publication Date: 2022-03-29
CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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Problems solved by technology
[0003] However, when the size of the Micro LED chip is reduced to 10um×10um, the proportion of the side light emitted by the Micro LED chip will increase, and the side light emitted by adjacent Micro LED chips on the display panel will interfere with each other, thus forming Light crosstalk; and the Light cross phenomenon will become more serious as the size of Micro LED chips and the distance between adjacent Micro LED chips on the display panel become smaller, which greatly restricts the development of Micro LED technology
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[0052] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Preferred embodiments of the application are shown in the accompanying drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the application more thorough and comprehensive.
[0053] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terminology used herein in the description of the application is only for the purpose of describing specific embodiments, and is not intended to limit the application.
[0054] Such as figure 1 As shown, a micro light-emitting diode of the present in...
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The present invention relates to the field of semiconductor display technology, in particular to a micro light emitting diode and its manufacturing method, and a display panel; the micro light emitting diode includes a substrate; and sequentially forming a buffer layer, a semiconductor layer, a first conductive type semiconductor layer, an active layer and a second conductivity type semiconductor layer; wherein, the first conductivity type semiconductor layer has a groove, and the active layer is filled in the groove but not connected to the side of the groove The walls are in contact to form a gap; a photoresist layer is filled in the gap; the present invention grows a photoresist layer on the outside of the active layer, and utilizes the photoresist layer to block the side light of the micro light-emitting diode to emit light to the periphery Diode propagation is used to reduce the light crosstalk of the side light of the miniature light-emitting diodes to the surrounding display units, so as to significantly improve the display effect.
Description
technical field [0001] The invention relates to the technical field of semiconductor display, in particular to a micro light-emitting diode, a manufacturing method thereof, and a display panel. Background technique [0002] Micro Light Emitting Diode (Micro LED) technology, that is, Light Emitting Diode (LED) miniaturization and matrix technology, refers to a high-density micro-sized LED array integrated on a chip; With the development of science and technology, Micro LED display devices, because of their good stability, lifespan, and advantages in operating temperature, also inherit the advantages of LEDs such as low power consumption, color saturation, fast response speed, and strong contrast. Therefore, its application is becoming more and more extensive, and the production process is becoming more and more mature. [0003] However, when the size of the Micro LED chip is reduced to 10um×10um, the proportion of the side light emitted by the Micro LED chip will increase, a...
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IPC IPC(8): H01L33/46H01L33/20H01L33/00
CPCH01L33/46H01L33/20H01L33/007H01L2933/0025
Inventor 杨顺贵黄嘉宏黄国栋林雅雯
Owner CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD