Double-tube-structure flow cell apparatus

Abstract

A double-tube-structure flow cell apparatus according to the present disclosure is characterized by including: a first flow path formation part connected to a medium inlet part such that a fluid medium is introduced into the medium inlet part and having a first flow path part such that the fluid medium flows in the first flow path part; a second flow path formation part having a second flow path part in communication with the first flow path part and connected to a medium discharge part such that the fluid medium of the second flow path part is discharged through the medium discharge part; and a bubble discharge part connected to the first flow path formation part to discharge air bubbles mixed with the fluid medium of the first flow path part. According to the present invention, the high-temperature flow medium flows in the double-tube-structure flow cell apparatus, the wavelength of the flow medium is absorbed by light, therefore, the concentration of the flow medium is measured under the conditions used in the actual semiconductor process, and there is no need of a plurality of times of chemical treatment of the flowing medium in order to improve detection sensitivity of the flow medium.

Description

technical field [0001] The present invention relates to a double-tube structure flow cell apparatus (FLOW CELL APPARATUS), in more detail, a double-tube structure flow cell apparatus capable of accurately measuring the concentration of the flow medium by monitoring the state of the flow medium under the use conditions of the flow medium. Background technique [0002] Generally, an etching process is performed in a semiconductor manufacturing process such as a semiconductor wafer or a solar cell. In the etching process, in order to etch the silicon nitride film, a high-temperature etching solution (fluid medium) such as a phosphoric acid solution is used. Since the eluted matter such as silicon is eluted from the semiconductor wafer and contained in the etching solution, the concentration of the eluted matter in the etching solution increases as the etching process of the semiconductor wafer is performed. If the concentration of eluted substances in the etching solution incr...

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Problems solved by technology

[0004] However, in the past, the etching solution was cooled to room temperature and chemically treated multiple times, so the detection error range increased due to the temperature difference of the etching solution.

Therefore, it is difficult to accurately predict the state of the etching solution under the usage conditions applied in the actual semiconductor process

[0005] In addition, when the high-temperature etching solution is lowered to normal temperature, the elution is easily precipitated from the etching solution, so it is sometimes difficult to accurately measure the concentration of the elution in the etching solution.

[0006] In addition, in order to accurately measure the concentration of the etching solution, the chemical treatment is divided into several times, so the matrix is ​​complicatedly formed in the process of analyzing the concentration, and the accuracy of the concentration analysis is reduced.

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