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Ion source with biased extraction plate

An extraction plate and ion source technology, applied in the field of ion sources, can solve problems such as unevenness and low efficiency of IHC ion sources

Pending Publication Date: 2021-10-15
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, certain ionic species can deposit near the extraction holes, forming whiskers that can cause the extracted beam to be non-uniform
Also, the IHC ion source can be inefficient due to the reduced plasma density moving from the center of the arc chamber to the extraction hole

Method used

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  • Ion source with biased extraction plate
  • Ion source with biased extraction plate
  • Ion source with biased extraction plate

Examples

Experimental program
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Effect test

Embodiment Construction

[0021] figure 1 An IHC ion source 10 is shown according to one embodiment. The IHC ion source 10 includes an arc chamber 100 . The arc chamber 100 has a body comprising two opposite ends, and a wall 101 connected to the ends. The two ends of the arc chamber 100 and the wall 101 may be constructed of conductive material and may be in electrical communication with each other. In some embodiments, a liner may be provided adjacent one or more of the walls 101 . A cathode 110 is disposed in the arc chamber 100 at the first end 104 of the arc chamber 100 . A filament 160 is arranged behind the cathode 110 . The filament 160 is in communication with a filament power source 165 . Filament power supply 165 is configured to pass electrical current through filament 160 such that filament 160 emits thermionic electrons. Cathode bias power supply 115 negatively biases filament 160 relative to cathode 110 , so the thermionized electrons are accelerated from filament 160 toward cathode...

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PUM

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Abstract

An indirectly heated cathode ion source having an electrically isolated extraction plate is disclosed. By isolating the extraction plate, a different voltage can be applied to the extraction plate than to the body of the arc chamber. By applying a more positive voltage to the extraction plate, more efficient ion source operation with higher plasma density can be achieved. In this mode the plasma potential is increased, and the electrostatic sheath reduces losses of electrons to the chamber walls. By applying a more negative voltage, an ion rich sheath adjacent to the extraction aperture can be created. In this mode, conditioning and cleaning of the extraction plate is achieved via ion bombardment. Further, in certain embodiments, the voltage applied to the extraction plate can be pulsed to allow ion extraction and cleaning to occur simultaneously.

Description

technical field [0001] Embodiments of the present invention relate to an ion source, and more particularly to an indirectly heated cathode ion source having an electrically isolated extraction plate that can be extracted independently of the main body of the arc chamber. The plate is biased. Background technique [0002] Various types of ion sources can be used to form ions used in semiconductor processing equipment. For example, an indirectly heated cathode (IHC) ion source operates by supplying electrical current to a filament disposed behind the cathode. The filament emits thermionic electrons, which accelerate toward and heat the cathode, which in turn causes the cathode to emit electrons into the arc chamber of the ion source. A cathode is disposed at one end of the arc chamber. A repeller may be disposed on an end of the arc chamber opposite the cathode. The cathode and repeller can be biased to repel electrons, directing them back toward the center of the arc cham...

Claims

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Application Information

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IPC IPC(8): H01J37/08H01J37/317
CPCH01J27/024H01J27/08H01J37/08H01J2237/022H01J2237/31701H01J37/3171H01J2237/061
Inventor 史费特那·B·瑞都凡诺具本雄亚历山大·利坎斯奇
Owner APPLIED MATERIALS INC
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