Epitaxial wafer for improving UVLED light emitting efficiency

Abstract

The invention discloses an epitaxial wafer for improving UVLED light emitting efficiency, which comprises a first buckle ring and a second buckle ring. The surfaces of the first buckle ring and the second buckle ring are both provided with buckle seats, a light guide plate is mounted in the buckle seats in a buckle manner, and a light guide pipe column is embedded in the light guide plate. The light guide pipe column is embedded in the light guide plate, the light transmission and extension effect is conveniently improved, and therefore the light emitting efficiency of the UVLED is enhanced, limiting ring frames are installed at the bottom ends of a first buckle ring and a second buckle ring in an inserted and buckled mode, and the first buckle ring and the second buckle ring are conveniently installed on the surface of a second-stage light emitting pipe in a buckled mode. Meanwhile, damping rubber rings are embedded in the inner walls of the first buckle ring and the second buckle ring, the situation that the first buckle ring and the second buckle ring make contact with the second-stage light-emitting tube and damage the second-stage light-emitting tube can be avoided, the anti-skid and damping functions can also be achieved, and the situation that the first buckle ring and the second buckle ring displace, and use is affected is avoided.

Description

technical field [0001] The invention relates to the technical field related to UVLEDs, in particular to an epitaxial wafer for improving the light extraction efficiency of UVLEDs. Background technique [0002] VLED is an ultraviolet light-emitting diode, which is a kind of LED. It integrates high-power LED chips with a luminous wavelength of 200nm to 450nm according to a certain ratio to form a light source with a peak wavelength of a certain wavelength in the 200nm to 450nm band. [0003] During the use of UVLEDs, epitaxial wafers can be installed according to actual needs to enhance the light output efficiency of UVLEDs. However, the existing epitaxial wafers that improve the light output efficiency of UVLEDs are inconvenient to install and disassemble, have poor light guiding effects, and are prone to collisions with UVLEDs. The situation that causes UVLED damage occurs. To this end, we propose an epitaxial wafer that improves the light extraction efficiency of UVLEDs. ...

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide an epitaxial wafer that improves the light output efficiency of UVLED, so as to solve the inconvenience of installation and disassembly of the existing epitaxial wafer that improves the light output efficiency of UVLED in the above-mentioned background technology, the light guide effect is poor, and it is easy to collide with UVLED, causing Problems in the case of UVLED damage

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