IGBT power module of packaging structure and working method thereof

Abstract

The invention provides an IGBT power module of a packaging structure and a working method thereof. The IGBT power module comprises a heat dissipation assembly and a temperature monitoring assembly, and the heat generated in the working process of an IGBT module is dissipated through a heat dissipation substrate arranged on the IGBT module; meanwhile, the heat dissipation assembly enhances the heat dissipation capability of the IGBT module, and when the temperature of a chip of the IGBT module exceeds 105 DEG C, a refrigeration sheet arranged in the heat dissipation assembly starts to work, the heat dissipation capacity of the heat dissipation assembly is enhanced, when the temperature of the IGBT module chip exceeds 150 DEG C, the temperature monitoring assembly cuts off a power source of the IGBT module and sends alarm data to the cloud end, the cloud end sends an alarm signal to the client side, a worker processes the IGBT module after receiving the alarm information through the client side, and the work efficiency is improved; so the problems that an existing IGBT module is prone to being damaged due to the fact that a chip is overheated, and the IGBT module cannot be processed in time when the IGBT module is abnormally overheated, and the IGBT module is prone to being damaged are solved.

Description

technical field [0001] The invention relates to the technical field of IGBT modules, in particular to an IGBT power module with a packaging structure and a working method thereof. Background technique [0002] IGBT has low driving power and low saturation voltage. It is very suitable for the conversion system with a DC voltage of 600V (volts) and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields. The chips inside the IGBT module will generate heat during work. When the internal chip temperature exceeds the working temperature of the chip, the chip will overheat and cause damage to the IGBT module. At the same time, when the IGBT module is abnormally overheated, the IGBT module cannot be processed in time, which may easily lead to damage to the IGBT module. Contents of the invention [0003] Embodiments of the present invention provide an IGBT power module with a package structure and a working met...

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Problems solved by technology

[0003] Embodiments of the present invention provide an IGBT power module with a package structure and a working method thereof. By adding a heat dissipation component and a temperature monitoring component, the heat generated during the operation of the IGBT module is dissipated through the heat dissipation substrate provided on the IGBT module, and the heat is dissipated simultaneously. The component enhances the heat dissipation capability of the IGBT module. When the temperature of the IGBT module chip exceeds 105°C, the cooling sheet set in the heat dissipation component starts to work to enhance the heat dissipation capability of the heat dissipation component. When the temperature of the IGBT module chip exceeds 150°C, the temperature monitoring component Disconnect the power supply of the IGBT module and send the alarm data to the cloud at the same time, the cloud sends the alarm signal to the client, and the staff will process the IGBT module after receiving the alarm information through the client. When the IGBT module is abnormally overheated, the IGBT module cannot be processed in time, which will easily lead to the problem of damage to the IGBT module

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