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Method for manufacturing three-dimensional memory and three-dimensional memory

A memory, three-dimensional technology, applied in the semiconductor field, can solve the problems of increased manufacturing cost, time-consuming and labor-intensive, and excessive overall wafer warpage, and achieve the effect of reducing warpage deformation, good structure and performance improvement

Pending Publication Date: 2021-10-29
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially when the amount of warping is accumulated, if the overall warpage of the wafer is too large, it will make it difficult to carry out subsequent processes.
[0005] To correct the deformation of the wafer, many steps may be added, which is time-consuming and labor-intensive, and may increase the manufacturing cost

Method used

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  • Method for manufacturing three-dimensional memory and three-dimensional memory
  • Method for manufacturing three-dimensional memory and three-dimensional memory
  • Method for manufacturing three-dimensional memory and three-dimensional memory

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Embodiment Construction

[0031] For a better understanding of the application, various aspects of the application will be described in more detail with reference to the accompanying drawings. It should be understood that these detailed descriptions are descriptions of exemplary embodiments of the application only, and are not intended to limit the scope of the application in any way. Throughout the specification, the same reference numerals refer to the same elements. The expression "and / or" includes any and all combinations of one or more of the associated listed items.

[0032] It should be noted that in this specification, expressions of first, second, third, etc. are only used to distinguish one feature from another, and do not represent any limitation on the features.

[0033] In the drawings, the thickness, size and shape of components have been slightly adjusted for convenience of illustration. The drawings are examples only and are not strictly drawn to scale. For example, the number of lay...

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PUM

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Abstract

The application provides a method for manufacturing a three-dimensional memory and the three-dimensional memory. The method comprises the steps: removing a sacrificial layer of a stacked structure formed on a substrate to form a sacrificial gap, the stacked structure comprising a groove penetrating through the stacked structure and extending to the substrate; forming a dielectric layer on the surfaces of the stacked structure and the substrate; removing a portion of the dielectric layer at a bottom end of the trench; oxidizing the substrate through the groove; and forming a gate layer in the sacrificial gap.

Description

technical field [0001] The present application relates to the field of semiconductors, and more specifically, to a method for manufacturing a three-dimensional memory and the three-dimensional memory. Background technique [0002] Three-dimensional memory is popular with consumers due to its small size and high storage density. [0003] 3D NAND-type three-dimensional memory, by setting a stack structure to increase storage capacity and storage density. However, due to the complex and fine structure of the three-dimensional memory, there are more difficulties in the manufacturing process. [0004] Three-dimensional memory is usually based on wafer manufacturing, and the wafer may emit warping deformation during the manufacturing process. For example, after the oxidation part is formed on the substrate, or after the sacrificial layer of the stack structure is removed to form a sacrificial gap, or after the sacrificial gap is filled with a conductive material to form a gate l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11524H01L27/11556H10B41/35H10B41/27
CPCH10B41/35H10B41/27
Inventor 孙璐
Owner YANGTZE MEMORY TECH CO LTD