Method for fabrication of bulk acoustic wave resonators
A bulk acoustic wave resonator and resonance technology, applied in the direction of impedance network, electrical components, etc., can solve the problems of inconvenient manufacturing of resonators, and achieve the effect of easy manufacturing and flexible manufacturing process
Active Publication Date: 2022-02-18
深圳新声半导体有限公司
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Problems solved by technology
[0004] Existing resonators must first etch a cavity on the substrate, and then fabricate a resonant structure on the basis of the substrate. However, due to the limitation of the substrate cavity, the fabrication of the resonator is inconvenient.
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[0029] In order to understand the characteristics and technical contents of the embodiments of the present invention in more detail, the implementation of the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. The attached drawings are only for reference and description, and are not intended to limit the embodiments of the present invention. In the following technical description, for purposes of explanation, numerous details are set forth in order to provide a thorough understanding of the disclosed embodiments. However, one or more embodiments may be practiced without these details. In other instances, well-known structures and devices may be shown simplified in order to simplify the drawings.
[0030] The terms "first", "second" and the like in the description and claims of the embodiments of the present invention and the above drawings are used to distinguish similar objects, and are not necessarily used to...
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The present application relates to the technical field of bulk acoustic wave resonators, and discloses a method for manufacturing bulk acoustic wave resonators, including: providing a layer to be removed, forming a resonant structure and a sacrificial layer sequentially from bottom to top on the layer to be removed; A cut-off boundary layer with a downward first protrusion and a downward second protrusion is formed on the layer, and both the first protrusion and the second protrusion pass through the sacrificial layer to connect the resonant structure; the cut-off boundary layer is far away from the sacrificial layer One side of the resonant carrier is formed; the layer to be removed is removed; the side of the resonant structure away from the sacrificial layer is etched, and the first conductive layer and the second conductive layer are formed on the etched resonant structure; corrosion The sacrificial layer between the first protrusion, the second protrusion and the resonant structure forms a first cavity. In this way, the bulk acoustic wave resonator can be fabricated on both sides, making the fabrication process more flexible, and there is no need to fabricate a resonant structure on the substrate formed with a cavity, thereby facilitating the fabrication of the bulk acoustic wave resonator.
Description
technical field [0001] The present application relates to the technical field of bulk acoustic wave resonators, for example, to a method for manufacturing bulk acoustic wave resonators. Background technique [0002] At present, the structure of traditional thin film bulk acoustic resonator includes upper electrode, piezoelectric layer and lower electrode. Usually, the cavity of the resonator is etched on the substrate first, and then the lower electrode, piezoelectric layer, and upper electrode are fabricated on the cavity. electrodes, etc., to form a complete resonator. [0003] In the process of implementing the embodiments of the present invention, it is found that there are at least the following problems in the related art: [0004] In the existing resonators, a cavity must be etched on the substrate first, and then a resonant structure is fabricated on the basis of the substrate. However, due to the limitation of the substrate cavity, the fabrication of the resonator ...
Claims
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IPC IPC(8): H03H3/02H03H9/02
CPCH03H3/02H03H9/02015H03H2003/023
Inventor 不公告发明人
Owner 深圳新声半导体有限公司