Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Pollution source searching method based on defective products in semiconductor production line

A semiconductor and production line technology, applied in the field of pollution source search, to achieve the effect of extreme efficiency, low cost and high efficiency

Active Publication Date: 2021-11-05
L&K ENG SUZHOU
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the actual operation process, we found: (1) If there is a problem with the machine where the defective product is located, it is easy to solve - as long as the machine is repaired; (2) If there is a problem with the production technology, it can also be repaired by technicians (3) But if the pollution caused by the environment (that is, the pollution caused by other machines in the clean space), then those skilled in the art are powerless

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pollution source searching method based on defective products in semiconductor production line
  • Pollution source searching method based on defective products in semiconductor production line
  • Pollution source searching method based on defective products in semiconductor production line

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] see Figure 1~5 As shown, a method for finding pollution sources based on defective products in a semiconductor production line. The semiconductor production line is located in a clean room to be monitored. The semiconductor production line includes 1200 procedures, and every 2 to 5 procedures are used to conduct a good inspection of semiconductor products. Rate detection; including the following steps:

[0056] (1) When a defect in a semiconductor product is detected in a certain yield inspection process, first determine whether the cause of the defect is caused by the machine associated with the defective product or the environment. If the former is the case, the machine will be repaired. If the latter, proceed to the next step;

[0057] In this embodiment, the order of the first 10 processes and the yield detection process is as follows: P1-P2-T1-P3-P4-P5-T2-P6-P7-P8-P9-P10-T3, wherein, P1 to P10 are respectively Refers to the 1st to 10th process of semiconductor p...

Embodiment 2

[0072] A method for finding pollution sources based on defective products in a semiconductor production line, the steps of which are the same as in Embodiment 1, the only difference being that in step (7), a movable sampling device is used to separate the sources of pollutants after the previous steps are eliminated Further sampling, followed by further testing, can determine the source of the contaminant.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a pollution source searching method based on defective products in a semiconductor production line. The pollution source searching method comprises the following steps: (1) judging whether the defective products are caused by a machine associated with the defective products or the environment; (2) determining species of pollutants; (3) checking machines in the clean room space to be monitored, and excluding machines with unrelated pollutant species; (4) carrying out reverse thrust by utilizing the airflow streamline, and excluding machines through which the airflow streamline passes from machines associated with defective products; (5) selecting a plurality of airflow streamlines from the remaining machines excluded in the step (2), setting the airflow streamlines as forward streamlines B, observing the reverse flow line A and the forward flow line B, and judging a suspicious machine; and (6) further detecting and determining the source of the pollutants. According to the method, no extra investment is added, the cost is low, the pollution source can be effectively found, and a systematic method is formed.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for finding pollution sources based on defective products in a semiconductor production line. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth, with technological advancements in IC materials and design resulting in multiple generations of ICs, where each generation has smaller and more complex circuits than the previous generation. In the course of IC development, functional density has increased dramatically while geometry size has decreased. Often this scaling down process provides many benefits by increasing production efficiency and reducing associated costs. This scaling down increases the complexity of processing and producing ICs and also places higher and higher demands on the production environment (clean room). In particular, gaseous molecular contamination (AMC) has become an increasi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/2251G01N23/22G01N21/3504
CPCG01N23/2251G01N23/22G01N21/3504G01N2021/3595Y02P90/02
Inventor 杨政谕
Owner L&K ENG SUZHOU
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com