Leakage current compensation circuit and method applied to low-power-consumption LDO

Abstract

The invention relates to a leakage current compensation circuit and method applied to a low-power-consumption LDO. When the LDO works under the conditions of high temperature, large input voltage and extremely low load current, the leakage current compensation circuit is opened, and when the LDO is in a typical circuit working state, the leakage current compensation circuit stops working. A leakage current supply source is used for proportionally monitoring and following the leakage current of a power tube in real time, a switch control circuit is used for monitoring the working state of the circuit in real time, and when the circuit works at high temperature, large input voltage and extremely low load current, a leakage current supply tube is turned on. The leakage current supply tube is used for providing leakage current for the LDO, so that the load current of the LDO can still keep correct output when the magnitude order of the load current is close to the magnitude order of the leakage current of a power transistor.

Description

technical field [0001] The invention relates to a low power consumption LDO circuit, in particular to a leakage current compensation circuit of the LDO under high temperature, large input voltage and extremely low load current. Background technique [0002] With the development of mobile portable devices, ultra-low power applications such as on-chip microprocessors, handheld devices, and mobile energy storage devices are increasing. In addition, with the continuous development of new energy sources such as solar cells, the power supply equipment at the input of LDO is also increasing. Continuous diversification has put forward higher requirements for the input voltage range of LDO. Therefore, the design requirements of LDOs with wide input voltage range and low quiescent current are gradually increasing. [0003] However, as the input voltage of the LDO continues to increase and the temperature of the operating environment continues to rise, the leakage current generated by...

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Problems solved by technology

[0003] However, as the input voltage of the LDO continues to increase, the temperature of the operating environment continues to rise, and the leakage current generated by the power transistor is also increasing. When the load current of the LDO is smaller than the leakage current of the power transistor, the output performance of the LDO will be greatly reduced, or even appear abnormal output

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