A heat-dissipating stacked package and its manufacturing method

Abstract

The present invention relates to a heat-dissipating stacked package and a manufacturing method thereof. In the manufacturing process of the heat-dissipating stacked package of the present invention, an annular groove is formed at the peripheral edge of the upper surface of the semiconductor die, and A plurality of first blind holes and a plurality of second blind holes are formed in the middle area of ​​the upper surface of the semiconductor die, and then metal nanoparticles are filled in the above-mentioned annular grooves and the first and second blind holes, that is, semiconductor The die provides multiple heat dissipation paths to facilitate rapid heat dissipation of the semiconductor die. And by setting the diameter of the first blind hole to be smaller than the diameter of the second blind hole, and the depth of the first blind hole to be smaller than the depth of the annular groove, the distance between adjacent first blind holes The distance is greater than the diameter of the first blind holes, and the distance between adjacent second blind holes is greater than the diameter of the second blind holes, which can ensure that the functional area of ​​the semiconductor die is not damaged during the manufacturing process.

Description

technical field [0001] The invention relates to the field of semiconductor packaging, in particular to a heat dissipation stacked package and a manufacturing method thereof. Background technique [0002] The packaging process of semiconductor chips is usually as follows: first, the semiconductor wafer is laser cut to form multiple discrete semiconductor chips, and then the cut semiconductor chips are mounted to the corresponding circuits with conductive adhesive materials or non-conductive adhesive materials. On the substrate or the lead frame, when using a conductive adhesive material to flip the semiconductor chip to the circuit substrate or the lead frame, it is usually necessary to set a low-fill material to improve the electrical connection stability of the semiconductor chip. When using a non-conductive When the adhesive material is used to bond the semiconductor chip to the circuit substrate or the lead frame, it is usually necessary to use gold wires, silver wires or...

AI Technical Summary

Problems solved by technology

However, in the current stacked package, the heat dissipation performance is not good, which may easily cause the stacked package structure to overheat and cause failure.

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