Infrared detector mirror image pixel and infrared detector based on CMOS process

Abstract

The invention relates to an infrared detector mirror image pixel and an infrared detector based on a CMOS process, the mirror image pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure, the CMOS measurement circuit system and the CMOS infrared sensing structure are both prepared by using the CMOS process, and the CMOS infrared sensing structure is directly prepared on the CMOS measurement circuit system; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures, the reflecting layer, the infrared conversion structure and the columnar structures are located on the CMOS measurement circuit system, the columnar structures are located between the reflecting layer and the infrared conversion structure, the reflecting layer comprises a supporting base, and the infrared conversion structure is electrically connected with the CMOS measurement circuit system through the columnar structures and the supporting base; and the reflecting plate arranged on the same layer as the supporting base is etched. According to the technical scheme, the problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, and in particular to an infrared detector mirror image element and an infrared detector based on a CMOS process. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the...

AI Technical Summary

Problems solved by technology

[0012] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an infrared detector image element and an infrared detector based on a CMOS process, Through the technical solution of the present disclosure, the problems of low performance, low pixel scale, and low yield rate of traditional MEMS process infrared detectors are solved, and the accuracy of detection results is improved.

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