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Elastic sub-module and modular crimping type semiconductor module

An elastic and crimp-type technology, which is applied in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve the problems of independent chip conductive path, limited chip current sharing effect, and difficult installation, so as to improve power The effect of density and current level, reduction of processing procedures, and reduction of material costs

Pending Publication Date: 2021-11-30
南瑞联研半导体有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The elastic sub-module of manufacturer C is a single chip corresponding to a single sub-module, which is large in number and difficult to install. In addition, manufacturer A uses elastic sub-modules, but the conductive paths of each chip are independent, and the effect of current sharing between chips is limited.

Method used

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  • Elastic sub-module and modular crimping type semiconductor module
  • Elastic sub-module and modular crimping type semiconductor module
  • Elastic sub-module and modular crimping type semiconductor module

Examples

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Embodiment Construction

[0030] The present invention will be further described below in conjunction with the accompanying drawings. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.

[0031] Such as figure 1 As shown, an elastic sub-module includes: a conductive sheet 1, an insulating elastic member 2 and a conductive plate 3;

[0032] The conductive sheet 1 is bent into a bent conductive sheet with several grooves 4, the conductive sheet 1 is clamped on the upper end of the insulating elastic member 2 through its grooves, and the lower end of the insulating elastic member 2 is connected to the conductive plate 3;

[0033] When no pressure is applied to the elastic sub-module, the insulating elastic member 2 supports the conductive sheet 1, and there is a gap between the conductive sheet 1 and the conductive plate 3. The conductive sheet 1 and the conductive plate 3 are not ...

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Abstract

The invention discloses an elastic sub-module and a modular crimping type semiconductor module. The elastic sub-module comprises a conducting strip, an insulating elastic piece and a conducting plate, the conducting strip is a bent conducting strip which is bent to be provided with a plurality of grooves, the conducting strip is clamped at the upper end of the insulating elastic piece through the grooves, and the lower end of the insulating elastic piece is connected with the conducting plate; the modular crimping type semiconductor module comprises a module collector plate, a chip sub-module, a module emitting polar plate and an elastic sub-module; the chip sub-module comprises a chip, a collector conductor and an emitter conductor; and the module collector electrode plate, the collector electrode conductor, the chip, the emitter electrode conductor, the elastic sub-module and the module emitter electrode plate are sequentially connected from top to bottom. The module has the advantages that the thermal resistance can be further reduced and the power density and the current level of the module can be improved through a chip modularization form; and the modularization of the chip subunits can also reduce the material cost and reduce the processing procedures.

Description

technical field [0001] The invention relates to an elastic sub-module and a modular crimping type semiconductor module, belonging to the technical field of power modules. Background technique [0002] Since the insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) began to be officially produced in 1986 and gradually serialized, its packaging quality and reliability have always affected its application in high-power applications such as industrial control, locomotive traction, and power systems. use and promotion. [0003] The development of the existing power system, locomotive traction and other fields has put forward higher requirements for the device power of the IGBT. At present, there are usually two types of packages for high-power IGBTs. One is the backplane insulation module package, which is composed of chips, backplanes, copper-clad ceramic substrates, bonding wires, sealing materials, insulating shells, power terminals, etc. Insulating mat...

Claims

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Application Information

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IPC IPC(8): H01L23/48H01L25/07
CPCH01L23/48H01L25/072
Inventor 童颜刘克明陈紫默潘政薇王蕤方赏华张大华
Owner 南瑞联研半导体有限责任公司
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