1results about How to "Increase the current level" patented technology

The application provides a semiconductor power module and a power device, the power module comprising a backing plate, the surface of the backing plate having a plurality of metal layers arranged in sequence along a first direction, the metal layers comprising at least a first metal layer, a second metal layer and a third metal layer arranged in sequence; the first metal layer and the third metal layer are strips extending along a second direction perpendicular to the first direction, the second metal layer is adjacent to the first metal layer and the third metal layer, and the widths of the second metal layer and the backing plate in the second direction match each other. Based on the technical scheme of the application, the number of small-area metal islands is reduced and integrated by layout design of the metal layers, the utilization rate of the surface space of the backing plate is improved, the area of one of the at least metal layers is maximized as a chip welding area, thereby reducing the thermal resistance of the device, improving the current level of the device, and meeting the requirements of the semiconductor power module for bearing large current and high voltage.