Microsecond electronic switch apparatus

Abstract

The invention provides a microsecond electronic switch apparatus. The microsecond electronic switch apparatus comprises two IGBTs, two diodes, five heat dissipation plates, two press-mounting plates,an absorption capacitor and a direct-current bus capacitor group, thereby finally implementing microsecond turn-off. According to the microsecond electronic switch apparatus, the microsecond protection can be implemented; moreover, a protected current grade is relatively high and can be up to a grade of a current flowing through a device in a testing process; the microsecond electronic switch apparatus can implement the effects that when the protection switch is turned off, an overvoltage is relatively low, the voltage equalization performance is good, and an output voltage and an output current can be improved to a required range; not only is the cost saved, but an inductance value of a parasitic inductor also is reduced; and the diode and the absorption capacitor are arranged, so the possibility that the device is broken through by the overvoltage is avoided, and the voltage equalization is implemented via a static partial voltage of an equalization resistor.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a microsecond-level electronic switch device. Background technique [0002] The core hardware component of an electronic switch is a power electronic device. The on-off time of a power electronic device is at the microsecond or even nanosecond level, which is much lower than the inherent delay time of a mechanical switch. According to the type of power electronic devices used by electronic switches, electronic switches can be divided into semi-controlled electronic switches and full-controlled electronic switches. Among them, the device used in the half-controlled electronic switch is generally a thyristor, and the device used in the main circuit of the fully-controlled electronic switch is generally an IGBT. At present, the electronic switches that are actually put into use, whether they are fully-controlled power electronic devices or half-controlled power electronic...

AI Technical Summary

Problems solved by technology

[0003] However, since the IGBT is very easy to be damaged during the high-current test process, although the fully-controlled electronic switch using the IGBT can theoretically achieve microsecond-level protection, the current level that can be protected is low, and it cannot reach the level of the device flowing through the test process. The current level, and the full-control electronic switch using IGBT in the prior art may be damaged during use, not only does not have a protective effect, but may also damage nearby devices

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