Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Full-spectrum lamp bead LED chip and full-spectrum low-UGR low-blue-light lamp

A LED chip and full-spectrum technology, applied in the field of lighting equipment, can solve the problems of high production cost of LED chips, lack of spectrum, high UGR, etc., and achieve the effects of reducing light blocking, increasing luminous flux, and improving color rendering index

Inactive Publication Date: 2021-11-30
NINGBO BEIFA GRP CO LTD
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention mainly solves the problems of high production cost and cumbersome process of LED chips existing in the prior art, and provides a full-spectrum lamp bead LED chip. Full-spectrum low UGR low blue light lamps close to sunlight

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Full-spectrum lamp bead LED chip and full-spectrum low-UGR low-blue-light lamp
  • Full-spectrum lamp bead LED chip and full-spectrum low-UGR low-blue-light lamp
  • Full-spectrum lamp bead LED chip and full-spectrum low-UGR low-blue-light lamp

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A full-spectrum lamp bead LED chip, including a silicon carbide substrate, on which two light-emitting chip areas with continuous band gaps are arranged, which are respectively an infrared chip area and a blue light chip area; the two light-emitting chip areas The luminescent materials are all InGaN ternary materials. By adjusting the ratio of In:Ga in the InGaN ternary materials, light-emitting chip areas with different wavelength bands from infrared to ultraviolet can be produced to achieve full-spectrum LEDs with a single material system on the same substrate.

[0041] The regional electrodes of the light-emitting chip adopt a horizontal common anode structure (such as figure 1 ), the horizontal common anode electrode structure includes an upper common part and a lower partition part, and the partition part has two partitions, which are symmetrically arranged left and right;

[0042] The common part sequentially includes a P-type electrode and a P-type GaN layer from...

Embodiment 2

[0048] Embodiment 2: A full-spectrum low UGR low blue light lamp of this embodiment, such as image 3 As shown, including the shell 8, several upper light boards 7 are mounted on the outer side of the top surface of the shell. The direction of light output is vertically upward, and the ambient brightness is changed through driver control to reduce UGR; several lower light boards 10 are mounted on the inner side of the top surface of the housing, and the main light-emitting lamp beads and supplementary light beads are alternately pasted on the lower light boards. The light emitting directions of the light-emitting lamp beads and the supplementary light beads are vertically downward; all the main light-emitting lamp beads and the supplementary light beads are connected to the control circuit 4; the chips of the main light-emitting lamp beads are the full-spectrum lamps in Example 1 Bead LED chips. The installation hook 2 is fixed on the top surface of the housing through the fi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a full-spectrum lamp bead LED chip and a full-spectrum low-UGR low-blue-light lamp. The chip comprises a silicon carbide substrate, wherein the silicon carbide substrate is provided with more than two light-emitting chip areas of a continuous forbidden band, the light-emitting materials of different light-emitting chip areas are InGaN ternary materials, and by adjusting the proportion of In: Ga in the InGaN ternary materials, light-emitting chip areas with different wave bands from infrared to ultraviolet can be manufactured. The lamp comprises a shell, wherein a plurality of upper lamp panels are attached to the outer side of the top surface of the shell, main light-emitting lamp beads and light supplementing lamp beads are alternately attached to the upper side surfaces of the upper lamp panels, and the light emitting directions of the main light-emitting lamp beads and the light supplementing lamp beads are both vertically upward; a plurality of lower lamp panels are attached to the inner side of the top surface of the shell, and main light-emitting lamp beads and light supplementing lamp beads are alternately attached to the lower lamp panels; and a chip of the main light-emitting lamp bead is a full-spectrum lamp bead LED chip. According to the scheme, the spectrum is close to the full spectrum of sunlight, the UGR effect is achieved, and the lamp is suitable for indoor environment illumination.

Description

technical field [0001] The invention relates to the field of lighting equipment, in particular to a full-spectrum lamp bead LED chip and a full-spectrum low UGR low blue light lamp. Background technique [0002] LED lighting technology has been welcomed for its high luminous efficiency, good shock and earthquake resistance, high reliability, long life, and easy adjustment, and has become a widely used lighting technology. LED energy-saving lamps have incomparable advantages over traditional light sources in many aspects, mainly in high luminous efficiency, long service life, durability, low voltage and low current drive, safe and reliable work, energy saving, environmental protection, shockproof, waterproof , small size, convenient light control, rich luminous color, wide color gamut, concentrated beam, fast response speed, intelligent, networked control and adjustment, etc. Its special advantages conform to the "green" standard of modern society, and also adapt to the rapi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/08H01L33/12H01L33/32F21S2/00F21V19/00H05B45/10H05B45/30H05B45/325F21Y115/10
CPCH01L33/06H01L33/08H01L33/12H01L33/32F21S2/00F21V19/001H05B45/10H05B45/30H05B45/325F21Y2115/10
Inventor 龙水云王伟纳
Owner NINGBO BEIFA GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com