Full-spectrum lamp bead LED chip and full-spectrum low-UGR low-blue-light lamp
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A LED chip and full-spectrum technology, applied in the field of lighting equipment, can solve the problems of high production cost of LED chips, lack of spectrum, high UGR, etc., and achieve the effects of reducing light blocking, increasing luminous flux, and improving color rendering index
Inactive Publication Date: 2021-11-30
NINGBO BEIFA GRP CO LTD
View PDF5 Cites 1 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0007] The present invention mainly solves the problems of high production cost and cumbersome process of LED chips existing in the prior art, and provides a full-spectrum lamp bead LED chip. Full-spectrum low UGR low blue light lamps close to sunlight
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0040] A full-spectrum lamp bead LED chip, including a silicon carbide substrate, on which two light-emitting chip areas with continuous band gaps are arranged, which are respectively an infrared chip area and a blue light chip area; the two light-emitting chip areas The luminescent materials are all InGaN ternary materials. By adjusting the ratio of In:Ga in the InGaN ternary materials, light-emitting chip areas with different wavelength bands from infrared to ultraviolet can be produced to achieve full-spectrum LEDs with a single material system on the same substrate.
[0041] The regional electrodes of the light-emitting chip adopt a horizontal common anode structure (such as figure 1 ), the horizontal common anode electrode structure includes an upper common part and a lower partition part, and the partition part has two partitions, which are symmetrically arranged left and right;
[0042] The common part sequentially includes a P-type electrode and a P-type GaN layer from...
Embodiment 2
[0048] Embodiment 2: A full-spectrum low UGR low blue light lamp of this embodiment, such as image 3 As shown, including the shell 8, several upper light boards 7 are mounted on the outer side of the top surface of the shell. The direction of light output is vertically upward, and the ambient brightness is changed through driver control to reduce UGR; several lower light boards 10 are mounted on the inner side of the top surface of the housing, and the main light-emitting lamp beads and supplementary light beads are alternately pasted on the lower light boards. The light emitting directions of the light-emitting lamp beads and the supplementary light beads are vertically downward; all the main light-emitting lamp beads and the supplementary light beads are connected to the control circuit 4; the chips of the main light-emitting lamp beads are the full-spectrum lamps in Example 1 Bead LED chips. The installation hook 2 is fixed on the top surface of the housing through the fi...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
PUM
Property
Measurement
Unit
thickness
aaaaa
aaaaa
thickness
aaaaa
aaaaa
thickness
aaaaa
aaaaa
Login to view more
Abstract
The invention discloses a full-spectrum lamp bead LED chip and a full-spectrum low-UGR low-blue-light lamp. The chip comprises a silicon carbide substrate, wherein the silicon carbide substrate is provided with more than two light-emitting chip areas of a continuous forbidden band, the light-emitting materials of different light-emitting chip areas are InGaN ternary materials, and by adjusting the proportion of In: Ga in the InGaN ternary materials, light-emitting chip areas with different wave bands from infrared to ultraviolet can be manufactured. The lamp comprises a shell, wherein a plurality of upper lamp panels are attached to the outer side of the top surface of the shell, main light-emitting lamp beads and light supplementing lamp beads are alternately attached to the upper side surfaces of the upper lamp panels, and the light emitting directions of the main light-emitting lamp beads and the light supplementing lamp beads are both vertically upward; a plurality of lower lamp panels are attached to the inner side of the top surface of the shell, and main light-emitting lamp beads and light supplementing lamp beads are alternately attached to the lower lamp panels; and a chip of the main light-emitting lamp bead is a full-spectrum lamp bead LED chip. According to the scheme, the spectrum is close to the full spectrum of sunlight, the UGR effect is achieved, and the lamp is suitable for indoor environment illumination.
Description
technical field [0001] The invention relates to the field of lighting equipment, in particular to a full-spectrum lamp bead LED chip and a full-spectrum low UGR low blue light lamp. Background technique [0002] LED lighting technology has been welcomed for its high luminous efficiency, good shock and earthquake resistance, high reliability, long life, and easy adjustment, and has become a widely used lighting technology. LED energy-saving lamps have incomparable advantages over traditional light sources in many aspects, mainly in high luminous efficiency, long service life, durability, low voltage and low current drive, safe and reliable work, energy saving, environmental protection, shockproof, waterproof , small size, convenient light control, rich luminous color, wide color gamut, concentrated beam, fast response speed, intelligent, networked control and adjustment, etc. Its special advantages conform to the "green" standard of modern society, and also adapt to the rapi...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to view more