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Multi-layer magnetic thin film device, preparation method thereof and magnetic memory

A magnetic thin film and device technology, applied in the direction of magnetic thin film, static memory, digital memory information, etc., can solve the problems of poor air stability, limited types of two-dimensional materials, and limited practical applications, etc., to achieve Curie temperature improvement, good vertical magnetic anisotropic effect

Pending Publication Date: 2021-12-07
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Description
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Problems solved by technology

[0004] However, so far, the types of two-dimensional materials with intrinsic magnetism are still very limited. The known magnetic van der Waals materials, such as Fe 3 GeTe 2 、Cr 2 Ge 2 Te 6 etc., the Curie temperature is much lower than room temperature, and the air stability is poor, which greatly limits its practical application in the future.

Method used

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  • Multi-layer magnetic thin film device, preparation method thereof and magnetic memory
  • Multi-layer magnetic thin film device, preparation method thereof and magnetic memory
  • Multi-layer magnetic thin film device, preparation method thereof and magnetic memory

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Embodiment Construction

[0021] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0022] Because the Curie temperature of two-dimensional magnetic van der Waals materials is much lower than room temperature, and their air stability is poor, their application range is limited. In order to expand the application range of the two-dimensional magnetic van der Waals material, the present invention needs to have good perpendicular magnetic anisotropy while ensuring that the Curie temperature of the two-dimensional ferromagnetic van der Waals material is higher than room temperature.

[0023] An embodiment of the present invention provides a multilayer magnetic thin film device, including the following structures arranged in sequence from bottom to top: a substrate, a first magnetic layer, a non-magnetic layer...

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Abstract

The invention discloses a multi-layer magnetic thin film device, a preparation method thereof and a magnetic memory, and the multi-layer magnetic thin film device comprises a substrate, a first magnetic layer, a non-magnetic layer and a second magnetic layer which are sequentially arranged from bottom to top. The Curie temperature of the first magnetic layer is higher than that of the second magnetic layer; the non-magnetic layer is used for realizing interlayer exchange magnetic coupling between the first magnetic layer and the second magnetic layer.

Description

technical field [0001] The invention relates to the technical field of magnetic memory, in particular to a multilayer magnetic thin film device, a preparation method thereof, and a magnetic memory. Background technique [0002] In recent years, two-dimensional materials have been widely concerned and studied due to their excellent dimensional properties. From the discovery of graphene in 2004, to transition metal chalcogenides, to the recent emergence of two-dimensional ferromagnetic materials such as CrI 3 , Cr2Ge 2 Te 6 , Fe 3 GeTe 2 Wait. These new magnetic low-dimensional materials are the material basis for constructing new spintronic devices and bring new hope to spintronic devices. [0003] Crl 3 and two-dimensional insulator Cr 2 Ge 2 Te 6 Compared to Fe 3 GeTe 2 (FGT), as an intrinsic ferromagnetic metallic material, has larger intrinsic perpendicular magnetic anisotropy, higher Curie temperature (around 220K) and relatively good stability, and is a prom...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/32H01F41/14G11C11/15
CPCH01F10/324H01F41/14G11C11/15
Inventor 王开友曹易张晓敏
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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