Ion plating device capable of automatically adjusting sputtering angle and incidence angle of ion beam and adjusting method thereof

Abstract

The invention relates to an ion plating device capable of automatically adjusting the sputtering angle and the incidence angle of an ion beam and an adjusting method thereof. The ion plating device capable of automatically adjusting the sputtering angle and the incidence angle of the ion beam comprises a vacuum box, a rotating mechanism, clamping mechanisms and an adjusting mechanism, wherein the rotating mechanism, the clamping mechanisms and the adjusting mechanism are arranged in the vacuum box and are located on the same vertical axis with an ion source, the clamping mechanisms are connected with a rotating disc, and a sputtering base of the adjusting mechanism is located on the upper portions of the clamping mechanisms. A workpiece is clamped between the rotating disc and the adjusting mechanism through the clamping mechanisms, the ion beam is emitted through the ion source, vertical push rods drive the sputtering base to adjust the height, inclined push rods drive the dip angle of sputtering sheets to change, so that the sputtering angle and the incidence angle of the ion beam are changed, the workpiece rotates along with the rotating disc to form a electricity conducting film layer, and the electricity conducting film layer can be evenly attached to the surface of the workpiece; and the ion plating device adapts to workpieces of different thicknesses and materials, and operation is easy and convenient.

Description

technical field [0001] The invention belongs to the technical field of electromechanical vacuum ion plating, and relates to an ion plating device and method for automatically adjusting the ion beam sputtering angle and incident angle. Background technique [0002] The ion source adopts the energy distribution characteristics of electrons, collects secondary electrons, and forms an ion beam, so that electrons with lower kinetic energy use higher potential collectors to land softly on the surface of the workpiece, reducing the collision loss between electrons and the surface of the workpiece. The problem of forming a conductive film layer on the surface of the workpiece is that the ion beam directly reaches the surface of the workpiece and there are spots and defects, which makes the conductive film layer uneven, unable to adjust the sputtering angle and incident angle, and unable to adapt to materials of different thicknesses and specifications. Contents of the invention ...

AI Technical Summary

Problems solved by technology

[0002] The ion source adopts the energy distribution characteristics of electrons, collects secondary electrons, and forms an ion beam, so that electrons with lower kinetic energy use higher potential collectors to land softly on the surface of the workpiece, reducing the collision loss between electrons and the surface of the workpiece. The problem of forming a conductive film on the surface of the workpiece is that the ion beam directly reaches the surface of the workpiece and there are spots and defects, which makes the conductive film layer uneven, unable to adjust the sputtering angle and incident angle, and unable to adapt to materials of different thicknesses and specifications.

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