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Ultra-sensitive micro-vibration detection device

A detection device and micro-vibration technology, which is applied to measurement devices, uses electrical devices, measures ultrasonic/sonic/infrasonic waves, etc., can solve the problems of inability to monitor the weak vibration of low-temperature devices with high sensitivity and low sensitivity, and achieve high vibration detection sensitivity. , the effect of changing the magnetoresistance

Inactive Publication Date: 2021-12-14
于孟今
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional mechanical or electromagnetic vibration sensors have low sensitivity and cannot monitor the weak vibration of cryogenic devices with high sensitivity

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0020] The invention provides an ultra-sensitive micro-vibration detection device, such as figure 1 As shown, it includes an antiferromagnetic layer 1 , a pinning layer 2 , a barrier layer 3 , a first elastic part 4 , a second elastic part 5 , and a free layer 6 . The material of the antiferromagnetic layer 1 is a hard magnetic antiferromagnetic material, specifically, the material of the antiferromagnetic layer 1 is IrMn, PtMn, FeMn. The pinning layer 2 is placed on the antiferromagnetic layer 1 . The material of the pinning layer 2 is a metal or semi-metal with high spin polarizability, specifically, the material of the pinning layer 2 is Co, Fe, CoFe, CoFeB, CoFeAl alloy. The barrier layer 3 is placed on the pinning layer 2 . The material of the barrier layer 3 is aluminum oxide or magnesium oxide. The first elastic part 4 and the second elastic part 5 are respectively fixed on two sides of the barrier layer 3 . The first elastic part 4 and the second elastic part 5 ext...

Embodiment 2

[0025] On the basis of Example 1, such as figure 2 As shown, the surface of the barrier layer 3 is provided with a concave shape. The concave shape is placed in the middle of the surface of the barrier layer 3 , and the first elastic part 4 and the second elastic part 5 are symmetrically arranged on the barrier layer 3 . In this way, on the one hand, the thickness of the middle part of the barrier layer 3 is smaller, and it is easier for electrons to tunnel from the middle part of the barrier layer 3; Under the action of the elastic part 5, the stress in the barrier layer 3 changes relatively more, thereby changing the quantum tunneling characteristics of the barrier layer 3 more, thereby changing the magnetoresistance of the magnetic tunnel junction more, thereby achieving a higher Sensitive micro-vibration detection.

Embodiment 3

[0027] On the basis of Example 2, such as image 3 As shown, in the free layer 6 the first elastic portion 4 and the second elastic portion 5 extend to the concave upper side. That is to say, the material of the free layer 6 is provided between the first elastic part 4 and the concave surface of the barrier layer 3 , and between the second elastic part 5 and the concave surface of the barrier layer 3 . In this way, when the first elastic part 4 and the second elastic part 5 vibrate, not only the stress in the barrier layer 3 is changed, but also the stress between the first elastic part 4 and the concave surface of the barrier layer 3 is changed. The interface between the free layer 6 material between the second elastic portion 4 and the concave surface of the barrier layer 3 and the concave surface of the barrier layer 3, thereby changing the quantum tunneling characteristics of the interface, thereby changing more The magnetoresistance of the magnetic tunnel junction enable...

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Abstract

The invention relates to the field of vibration detection, in particular to an ultra-sensitive micro-vibration detection device. A pinning layer is arranged on an antiferromagnetic layer, the pinning layer is made of metal or semimetal with high spinning polarizability, a barrier layer is arranged on the pinning layer, a first elastic part and a second elastic part are respectively fixed on two sides of the barrier layer, the first elastic part and the second elastic part extend out of the barrier layer, and a free layer covers the middle portion of the barrier layer, and the portions, on the barrier layer,of the first elastic part and the second elastic part. According to the ultra-sensitive micro-vibration detection device of the invention, the pinning layer, the barrier layer and the free layer form a magnetic tunnel junction. When being applied, the device is fixed on an object to be measured; meanwhile, a magnetic field acts on the device. The vibration intensity or the vibration frequency of the object to be measured is determined by measuring the difference between the magnetic resistance of the magnetic tunnel junction under a vibration state and a static state. The device is based on the quantum tunneling effect, so that the device has the advantage of high vibration detection sensitivity.

Description

technical field [0001] The invention relates to the field of vibration detection, in particular to an ultrasensitive micro-vibration detection device. Background technique [0002] Vibration sensing devices not only have important applications in many industries and fields such as health monitoring, earthquake monitoring, and industrial control, but also have important applications in low temperature environment monitoring and low temperature device operation status monitoring. Traditional mechanical or electromagnetic vibration sensors have low sensitivity and cannot monitor the weak vibration of cryogenic devices with high sensitivity. Contents of the invention [0003] In order to solve the above problems, the present invention provides an ultrasensitive micro-vibration detection device, comprising an antiferromagnetic layer, a pinned layer, a barrier layer, a first elastic part, a second elastic part, a free layer, and an antiferromagnetic layer. The material is a har...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01H11/02
CPCG01H11/02
Inventor 于孟今
Owner 于孟今
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