High-linearity broadband radio frequency attenuator

Abstract

The invention provides a high-linearity broadband radio frequency attenuator, which is characterized in that when an attenuation unit works in a reference state, an attenuation group transistor is switched on, a reference group transistor is switched off, the gate potential of middle crystals (except two transistors at the head end and the tail end) connected in series in a reference group is low potential, the source potential and the drain potential are high potential, and equivalent negative bias voltage bias is formed; and when the attenuator works in an attenuation state, the reference group transistor is switched on, the attenuation group transistor is switched off, the gate potential of the middle crystals (except the two transistors at the head end and the tail end) connected in series in the attenuation group is low potential, the source potential and the drain potential are high potential, and equivalent negative bias voltage bias is formed. Therefore, the high-linearity broadband radio frequency attenuator provided by the invention can realize high linearity performance by means of the equivalent negative bias under the condition of no negative pressure, and the switching efficiency is high.

Description

technical field [0001] The invention belongs to the field of attenuators, in particular to a high-linearity broadband radio frequency attenuator. Background technique [0002] RF front-end technology is widely used in wireless communication technologies such as LAN equipment, base station equipment, and radar equipment. Attenuator circuits are an important part of some RF front-end architectures. In base station equipment and radar equipment, attenuators often need to deal with high-power signals, so linearity performance is an important indicator of attenuators. The current practice to improve the linearity performance of an attenuator is to bias the off-state transistors in the attenuator circuit with a negative voltage. However, negative pressure often requires an oscillator and a charge pump to generate, which increases the difficulty of designing a fully integrated RF chip, increases additional power consumption, and the oscillator also introduces noise to the RF link...

AI Technical Summary

Problems solved by technology

[0003] In view of this, the present invention aims to propose a high-linearity broadband radio-frequency attenuator to solve the problem of improving the linearity performance of the attenuator, and the bias voltage of the transistor is a negative voltage, which brings high difficulty in the design of the radio-frequency chip. high power consumption

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