High-overload and recoverable pressure sensor and manufacturing method thereof
A technology for restoring pressure and sensors, applied in high linearity, recoverable silicon-based pressure sensors and manufacturing, absolute pressure, high overload fields, can solve the problem of large resistance temperature drift, poor overload performance, not suitable for high-precision pressure detection, etc. problem, to achieve the effect of high sensitivity and high linearity
Active Publication Date: 2015-02-04
CHANGZHOU XIAOGUO INFORMATION SERVICES
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[0002] The pressure sensor is a commonly used pressure measurement device. The silicon-based pressure sensor uses the piezoresistive effect of single crystal silicon. The applied pressure deforms the silicon wafer, which changes the resistance of the silicon, collects and records the signal, and measures the magnitude of the applied pressure. The silicon-based pressure sensor has a small, It has the advantages of cheapness, integration, and high sensitivity, but its disadvantages are: 1. The overload performance is poor, generally only 5-7 times, and it breaks after overloading, which is not recoverable; 2. The linearity of the chip within the measurement range is average At about 1-3%, higher linearity needs to be realized by external compensation; 3. Its resistance is prepared by general diffusion or ion implantation method, and the temperature drift of resistance is large, which is not suitable for high-precision pressure detection
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[0033] First select (100) single crystal silicon substrates, and require strict thickness screening. The unevenness of the thickness (that is, the parallelism of both sides) is required to be less than 0.01 microns, but there is no requirement for the overall deviation of the thickness. If the parallelism of the two sides does not meet the requirements , it must be pre-polished first, and wax polishing cannot be used.
[0034] For pre-polished monocrystalline silicon substrates that meet the requirements, the surface is cleaned at 1000o Oxidize with dry oxygen for 20 minutes under C conditions, then oxidize with hydrogen and oxygen to synthesize water vapor for 2 hours, and then oxidize with dry oxygen for 30 minutes to grow 0.5 micron SiO on the surface of the silicon substrate 2 Corrosion protection layer, photolithography on the surface of the silicon wafer to form a square well corrosion window, in the etching solution of hydrofluoric acid: ethylenediamine: water = 1:1:3 (v...
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Abstract
The invention relates to a silicon-based pressure sensor, and especially relates to a high-overload, high linearity, absolute-pressure and recoverable silicon-based pressure sensor, and a manufacturing method thereof. According to the invention, with varistor arrangement and the amplification effect of a convex beam, signal output sensitivity of the silicon-based pressure sensor provided by the invention without amplification is more than two times that of a common silicon-based pressure sensor; and an appropriate suitable thickness-to-width ratio of the convex beam can be selected according to a measuring range, such that a maximum signal output can be obtained. The method provided by the invention is based on a traditional silicon-based pressure sensor manufacturing principle. A microelectronic device manufacturing technology and a MEMS technology are adopted, such that the volume of a chip is small, the cost is low, and the profit is high.
Description
technical field [0001] The invention relates to a silicon-based pressure sensor, in particular to a high-overload, high-linearity, absolute-pressure, recoverable silicon-based pressure sensor and a manufacturing method. Background technique [0002] The pressure sensor is a commonly used pressure measurement device. The silicon-based pressure sensor uses the piezoresistive effect of single crystal silicon. The applied pressure deforms the silicon wafer, which changes the resistance of the silicon, collects and records the signal, and measures the magnitude of the applied pressure. The silicon-based pressure sensor has a small, It has the advantages of cheapness, integration, and high sensitivity, but its disadvantages are: 1. The overload performance is poor, generally only 5-7 times, and it breaks after overloading, which is not recoverable; 2. The linearity of the chip within the measurement range is average At about 1-3%, higher linearity needs to be realized by external ...
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IPC IPC(8): B81C1/00G01L1/18
Inventor 李金华
Owner CHANGZHOU XIAOGUO INFORMATION SERVICES