Methods of forming microelectronic devices, and related microelectronic devices and electronic systems
A microelectronic device, semi-conductive technology, applied in the direction of circuits, capacitors, electrical components, etc., can solve problems such as defects, hindering memory devices, etc.
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Embodiment 1
[0101] Embodiment 1: A method of forming a microelectronic device, which includes: forming a microelectronic device structure, the microelectronic device structure includes: a base structure; a doped semiconductive structure, which includes a first layer overlying the base structure a portion and a second portion extending vertically from the first portion into the base structure; a stack structure overlying the doped semiconducting structure and comprising a vertically alternating sequence of conductive structures and insulating structures; a cell pillar structure, extending vertically through the stack structure to the first portion of the doped semiconducting structure; and a digit line structure vertically overlying the stack structure; forming additional microelectronic device structures including control logic; attaching the microelectronic device structure to the additional microelectronic device structure to form a microelectronic device structure assembly, the digit li...
Embodiment 2
[0102] Embodiment 2: The method of Embodiment 1, wherein forming a microelectronic device structure comprises forming the microelectronic device further comprising a conductive contact structure extending vertically through the stacked structure into the doped semiconducting structure structure.
Embodiment 3
[0103] Embodiment 3: The method of any one of embodiments 1 and 2, wherein forming the microelectronic device structure comprises: forming a preliminary stack structure on a doped semiconducting material overlying the base structure, wherein The preliminary stack structure includes a vertical alternating sequence of first insulating structures and second insulating structures; forming an opening extending vertically through the preliminary stack structure and the doped semiconductive material into the base structure; using additional semiconductive material filling a lower portion of the opening positioned within the base structure and the doped semiconducting material; annealing the doped semiconducting material and the additional semiconducting material to form the doped semiconducting material therefrom structure; forming the unit pillar structure in the remaining upper portion of the opening; forming a slot extending through the preliminary stack structure; using the slot t...
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