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Thin film transistor and manufacturing method thereof, display substrate and display device

A technology of thin film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of unfavorable display device display quality, poor characteristics of thin film transistors, etc., to improve mobility characteristics, improve work efficiency, Improve display quality effect

Pending Publication Date: 2021-12-21
BOE TECH GRP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thin film transistors currently used in display devices have poor characteristics, which is not conducive to the display quality of display devices.

Method used

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  • Thin film transistor and manufacturing method thereof, display substrate and display device
  • Thin film transistor and manufacturing method thereof, display substrate and display device
  • Thin film transistor and manufacturing method thereof, display substrate and display device

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Embodiment Construction

[0069] In order to further illustrate the thin film transistor, the manufacturing method thereof, the display substrate, and the display device provided by the embodiments of the present invention, a detailed description will be given below in conjunction with the accompanying drawings.

[0070] see Figure 1 ~ Figure 2b , the embodiment of the present invention provides a thin film transistor, including: a substrate 10, an active layer 20 disposed on the substrate 10, a gate 30, a source and a drain; the active layer 20 is formed as a grid structure, including a plurality of silicon nanowires 201 extending along a first direction, the active layer 20 includes a source region 202 and a drain region 203 oppositely arranged along the first direction, and located in the source region 202 and the channel region 204 between the drain region 203; the gate 30 extends along a second direction, the second direction intersects the first direction, and the gate 30 is on the substrate 10 ...

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Abstract

The invention provides a thin film transistor and a manufacturing method thereof, a display substrate and a display device, relates to the technical field of display, and is used for improving the characteristics of the thin film transistor. The thin film transistor comprises an active layer arranged on a substrate, wherein the active layer is of a grid-shaped structure and comprises a plurality of silicon nanowires extending in the first direction, and the active layer comprises a source electrode region, a drain electrode region and a channel region located between the source electrode region and the drain electrode region, wherein the source electrode region and the drain electrode region are oppositely arranged in the first direction; a grid electrode which is arranged on the substrate and extends along a second direction, wherein the second direction is intersected with the first direction, and the orthographic projection of the grid electrode on the substrate is respectively overlapped with the orthographic projection of the plurality of silicon nanowires in the channel region on the substrate; and a source electrode and a drain electrode which are arranged on the substrate, wherein the source electrode is respectively contacted with the plurality of silicon nanowires in the source electrode region, and the drain electrode is respectively contacted with the plurality of silicon nanowires in the drain electrode region.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a manufacturing method thereof, a display substrate, and a display device. Background technique [0002] With the continuous development of display technology, active matrix organic light-emitting diode (English: Active-MatrixOrganic Light-Emitting Diode, abbreviated: AMOLED) display device, and liquid crystal display (English: Liquid Crystal Display, abbreviated: LCD) are more and more widely used. more and more widely. Among them, a thin film transistor (English: ThinFilm Transistor, TFT for short), as a core device of an AMOLED display device and an LCD, has received great attention. However, the characteristics of thin film transistors currently used in display devices are poor, which is not conducive to the display quality of display devices. Contents of the invention [0003] The purpose of the present invention is to provide a thin film transis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/06H01L21/336H01L27/12
CPCH01L29/78645H01L29/78696H01L29/0673H01L29/66757H01L27/1222H01L29/66477H01L29/775B82Y10/00H01L29/66439B82Y40/00H01L29/41758H01L29/41733H01L29/6675H01L29/78618H01L29/78663
Inventor 贺家煜宁策李正亮胡合合黄杰姚念琦王治关峰
Owner BOE TECH GRP CO LTD
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