Semiconductor device structure and manufacturing method thereof

Abstract

The invention provides a semiconductor device structure and a manufacturing method thereof. The semiconductor device structure comprises a substrate, a P type semiconductor channel, an N type semiconductor channel, a gate medium layer, a gate electrode layer, P source and drain regions and N source and drain regions; the P type semiconductor channel is hung over the substrate, and a silicon-tritium passivation layer is formed in the surface of the P type semiconductor channel; the N type semiconductor channel is hung over the substrate, and a silicon-tritium passivation layer is formed in thesurface of the N type semiconductor channel; the gate medium layer surrounds the P type semiconductor channel and the N type semiconductor channel; the gate electrode layer surrounds the gate medium layer; the P source and drain regions are connected to the two ends of the P type semiconductor channel respectively; the N source and drain regions are connected to the two ends of the N type semiconductor channel; and the width of the cross section of the P type semiconductor channel is greater than that of the cross section of the N type semiconductor channel. Multiple layers of the device can be laminated in the unit area, the channel length of the device can be reduced effectively, the short channel effect can be reduced, the load capacity of the device is improved, and the integrated level and reliability of the device are improved.

Description

technical field [0001] The invention belongs to the design and manufacture of integrated circuits, in particular to a three-dimensional stacked junctionless passivation channel semiconductor device structure and a manufacturing method thereof. Background technique [0002] With the continuous development of semiconductor technology, the size of semiconductor devices is continuously reduced, the performance of driving current is continuously improved, and the power consumption is continuously reduced. production cost. [0003] Fin Field-Effect Transistor (FinFET) is a new complementary metal oxide semiconductor transistor. The shape of FinFET is similar to that of a fish fin. This design can improve circuit control and reduce leakage current, shortening the gate length of transistors. [0004] FinFET is an innovative design derived from the traditional standard transistor—Field-Effect Transistor (FET). In the traditional transistor structure, the gate can only control the ...

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Problems solved by technology

[0009] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a semiconductor device structure and its manufacturing method, which are used to solve the problem of insufficient power of the device in the prior art, the difficulty of further reducing the channel length and the low reliability of the device The problem

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