31results about How to "Increased current carrying capacity" patented technology

The invention discloses a lithium battery pack management system of a smart balance car. The system includes a first stage battery protection unit, a second stage battery protection unit, a third stage battery protection unit, a fourth stage battery protection unit, a charging unit, and a discharging unit which are successively connected. A lithium battery pack includes 20 lithium batteries which are in successive series connection. The charging unit and the discharging unit are in series connection, and are connected to a circuit where the lithium battery pack is at. The system manages and protects the lithium battery pack of the smart balance car through a multi-stage battery protection unit, reduces the chances of unbalanced charging and discharging or occurrence of abnormities caused by too many single lithium batteries in a lithium battery pack, and increases service life of the lithium battery pack.

The invention discloses a small-diameter and high-power flexible heating cable, and a preparation method thereof. The small-diameter and high-power flexible heating cable is provided with a heating alloy wire core line in an innermost layer; the external part of the heating alloy wire core line is lapped with an insulating fiber layer; and the outer surface of the insulating fiber layer is coated with a high temperature resistance splicing and sealing coating layer. The preparation method comprises the following steps: a) electrothermal alloy is subjected to fine wire drawing processing and is machined into the heating alloy wire core line with the diameter of 0.4-0.7 mm, and the heating alloy wire core line is subjected to high temperature annealing and softening in the hydrogen protective atmosphere; b) the heating alloy wire core line is lapped with the multi-layer insulating layer, and is made into a small high-power special heating cable with the diameter smaller than Phi 1.0 mm; c) the high temperature resistance splicing and sealing coating is sprayed onto the surface of the insulating fiber layer of the heating cable; and d) the heating cable is aired at the room temperature and is placed in an oven, and after 1-hour heat preservation at 200 DEG C and solidification process, the small-diameter and high-power flexible heating cable can be obtained. In the invention, the small high-power special heating cable with the diameter smaller than Phi 1.0 mm can be manufactured; and the design requirement of generating high power instantly in a narrow space can be met, and the ice removal and prevention efficiencies and effects of relative components can be improved.

This invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a subtract; a P-type semiconductor channel suspended on the subtract, a silicon-deuterium passivation layer on the P-type semiconductor channel; an N-type semiconductor channel suspended on the subtract, a silicon-deuterium passivation layer on the N-type semiconductor channel; a gate dielectric layer, wrapped around the P-type semiconductor channel and the N-type semiconductor channel; a gate electrode layer, wrapped around the gate dielectric layer; a P-type source region and a P-type drain region, connected to two ends of the P-type semiconductor channel respectively; an N-type source region and an N-type drain region, connected to two ends of the N-type semiconductor channel respectively; wherein a cross-sectional width of the P-type semiconductor channel is greater than that of the N-type semiconductor channel. The present invention has ability to realize multi-layer staking under unit area, and reducing the length of the channel effectively so as to reduce channel effect and improve carrying capacity and the reliability of the device.

The invention relates to a method for compositely welding an aluminum alloy in a TIG welding manner and a MIG welding manner alternately. The method disclosed by the invention aims to solve the problems that a conventional aluminum alloy welding method is low in welding efficiency, poor in weld-seam formation, complicated in welding equipment, unstable in process, poor in flexibility, and high in cost. The method comprises the following steps: the output end of the positive pole of a constant-current TIG welding power source is connected with a workpiece to be welded; the negative pole of the constant-current TIG welding power source is connected with a tungsten electrode clamp; a TIG welding gun is clamped on the tungsten electrode clamp; a melting-electrode welding wire is arranged in a gas protection sleeve on the side wall of the TIG welding gun; the positive pole of a constant-voltage MIG welding power source is connected with a melting-electrode clamp; a MIG welding gun is clamped on the melting-electrode clamp; the negative pole of the constant-voltage MIG welding power source is connected with the workpiece to be welded; through an IGBT switch, the constant-current TIG welding power source and the constant-voltage MIG welding power source are controlled to be alternately switched on and off, so that welding is realized. The method disclosed by the invention is used for welding the aluminum alloy.

The invention discloses a method for manufacturing an inductor with a two-in-one structure with an air gap on the side surface. The base has four electrode grooves, which can facilitate electrode installation without using an additional positioning device for positioning. The Z-shaped extension sheet at the end of the coil is close to the electrode so that the extension sheet wraps the end of the coil and is pressed tightly with a jig tool. The extension sheet of the electrode is arranged in a Z shape so that the extension sheet just wraps the end of the coil, and the wrapping of the two is welded again to achieve a conductive effect Better, effectively reduce loss. Compared with the inductor with an air gap on the front surface, the two-in-one structure inductor with an air gap on the side surface prepared by the manufacturing method of the present invention has a compact overall structure, small volume and good performance. The preparation method of the invention is simple in operation and convenient in assembly, has formed an independent complete side surface with air gaps during production, and has high work efficiency.

A HV power transmission line (106) with at least two tubular electrical insulation devices (108), at least one electrically uninsulated nominal conductor segment (102) and a joint (1 17) for jointing the ends of the insulation devices plus at least one power termination (109) for connecting the transmission line. The insulation device (108) is flexible, has an inner electrically conductive layer (1 10) at its inner wall surface, and is of such insulation quality that it can electrically insulate the conductor segment (102) from the exterior of the insulation device once inserted into the tubular insulation device. Once inserted the uninsulated conductor segment touches the inner electrically conductive layer (1 10) at an inner wall surface of the tubular electrical insulation device such that the inner electrically conductive layer (1 10) is on the same electric potential as the conductor segment in an operating state of the HV power transmission line each.

The present invention discloses a complex conductor rail used for vehicle to ground power supply system in rail transit system, and comprises a matrix and a contact body. The contact body is made of hard metal material with wear resistance and excellent conductivity; the matrix is made of metal material softer than the contact body; the rail also comprises a plating layer which is arranged between the matrix and the contact body; the plating layer is made of metal material which has excellent compatibility to the metal materials of the matrix and the contact body, and has excellent conductivity; the contact body is stitched to the matrix after being processed by the plating layer. The present invention also discloses a manufacturing method of the complex conductor rail, which comprises forming a blank of the contact body, and a blank of the matrix; the compounding surface is processed by plating; the compounding surface of the matrix corresponds to the compounding surface of the blank of the contact body; the blank of the contact body and the blank of the matrix are stitched after being processed by plating. The metal contact surface of the complex conductor rail has the advantages of excellent conductivity, high bond strength, and simple structure. The manufacturing method has the advantages of simple technology and low costs.

The invention provides a semiconductor device structure and a manufacturing method thereof. The structure includes: a substrate; a P-type semiconductor channel and an N-type semiconductor channel suspended on the substrate; a gate dielectric layer surrounding the P-type semiconductor channel and the N-type semiconductor channel. Semiconductor channel; gate electrode layer, surrounding the gate dielectric layer; P-type source region and P-type drain region, connected to both ends of the P-type semiconductor channel; N-type source region and N-type drain region, connected to the N-type semiconductor channel The two ends of the channel; wherein, the P-type ion doping concentration of the P-type semiconductor channel gradually decreases from the surface of the P-type semiconductor channel to the center, and the N-type ion doping concentration of the N-type semiconductor channel decreases from the N-type semiconductor channel. The surface of the channel gradually decreases toward the center, and the cross-sectional width of the P-type semiconductor channel is greater than that of the N-type semiconductor channel. The invention can realize multi-layer stacking of devices in a unit area, effectively shorten channel length, reduce short channel effect, and improve the load capacity of the device and the control ability of the gate to the channel.

The invention relates to a current tolerance type multi-layer PCB and a preparation method thereof. According to the preparation method, a plurality of inner-layer core plates and a plurality of prepregs are respectively subjected to through hole treatment, and then the through hole core plates and the through hole prepregs are stacked and arranged, so that through holes of the through hole core plates are communicated with through holes of the through hole prepregs. Then a conducting medium is placed into the communicated through holes, and first lamination treatment is performed to obtain a first laminated plate; and copper deposition and electroplating are performed on the first laminated plate to connect the conductive medium with the pre-arranged plate, secondary outer layer pattern processing is performed, secondary laminating treatment is performed, and the first copper foil and the second copper foil of the second laminated plate are respectively connected with the conductive medium through the first blind hole and the second blind hole. And then copper deposition treatment is carried out on the blind hole plate, and metal copper is attached to the hole walls of the first blind hole and the second blind hole. Through the preparation method, the current tolerance performance can be effectively improved.

Hot-melt solder belongs to a composition. The prior art cannot fully weld metals, fail to achieve intermetallic molecular bonding, and the mechanical strength and electrical conductivity are not ideal. The present invention is composed of the following powdery components and corresponding mass percentages: Composition: copper oxide 58%~62%, iron oxide 4%~6%, aluminum 4%~6%, magnesium 14%~16%, copper 6%~8%, iron 1%~3%, phosphorus 4%~ 6%. The invention can be used for welding between pure copper, brass, bronze, red copper, copper-clad steel, pure iron, stainless steel, wrought iron, galvanized steel, cast iron, etc. Good performance, stable impact resistance, strong corrosion resistance, simple and safe connection, different reaction temperatures can be configured according to the metal characteristics of the conductor to be welded, so that the welded joint is stronger and more perfect.

A busbar system for conveying electrical energy is disclosed, wherein the busbar system comprises at least a first segment and a second segment, wherein the segments each comprise at least one first busbar having a first cross-section and holders, wherein the busbars of the segments are held by corresponding holders and are electrically connected to each other through connection mechanisms.

The invention provides a semiconductor device structure and a manufacturing method thereof. The semiconductor device structure includes: a substrate; a P-type semiconductor channel suspended above the substrate; an N-type semiconductor channel suspended above the substrate The gate dielectric layer is surrounded by the P-type semiconductor channel and the N-type semiconductor channel; the gate electrode layer is surrounded by the gate dielectric layer; the P-type source region and the P-type drain region are respectively connected to the The two ends of the P-type semiconductor channel; and the N-type source region and the N-type drain region are respectively connected to the two ends of the N-type semiconductor channel; wherein, the cross-sectional width of the P-type semiconductor channel is greater than that of the N Type semiconductor channel cross-sectional width. The invention can realize multi-layer stacking of devices in a unit area, effectively shorten the channel length of the device, reduce the short channel effect, improve the load capacity of the device, and effectively improve the integration degree of the device.

A busbar system for the transport of energy especially for long vertical paths is disclosed, wherein the busbar system comprises multiple sections, the sections each comprise multiple busbars and a holding piece, and the busbars of the sections are held by the respective holding pieces and electrically connected to one another via a connection.

The invention relates to a busbar system for transporting electrical energy, wherein the busbar system comprises at least a first segment and a second segment, wherein the segments each comprise at least one first segment with a first cross-section. A busbar, at least one second busbar with a second cross-section, a holder and at least one connection means, wherein the busbars of the segments are held by the corresponding holder and electrically connected to each other via the at least one connection means connection, and where either one of the first bus bars or one of the second bus bars serves as a common earth (PE) and / or a common neutral.

A laser-double TIG arc composite self-melting brazing method for aluminum alloy and stainless steel, including using laser beam-double TIG arc composite heat source to weld the lap joint where the aluminum alloy plate is on the top and the stainless steel is on the bottom, and the composite heat source melts the aluminum alloy , heating the stainless steel to form a brazing interface. The laser beam is a scanning laser beam with variable power pulse; the double TIG electric arc includes a positive polarity TIG electric arc and a reverse polarity TIG electric arc; side; during the welding process, the laser beam scans the surface of the workpiece to be welded, and ensures that 2 / 3-3 / 4 of the laser heat is on the aluminum alloy plate, 1 / 3-1 / 4 of the laser heat is on the stainless steel plate, and the DC is reversed to TIG The welding torch and DC positive TIG welding torch alternately start the arc, the reverse polarity TIG arc and high-power laser pulse form a composite heat source, and the positive polarity TIG arc and low-power laser pulse form a composite heat source. The welding method of the invention can obtain self-fluxing brazing joints with excellent mechanical properties.

A HV power transmission line (106) with at least two tubular electrical insulation devices (108), at least one electrically uninsulated nominal conductor segment (102) and a joint (1 17) for jointing the ends of the insulation devices plus at least one power termination (109) for connecting the transmission line. The insulation device (108) is flexible, has an inner electrically conductive layer (1 10) at its inner wall surface, and is of such insulation quality that it can electrically insulate the conductor segment (102) from the exterior of the insulation device once inserted into the tubular insulation device. Once inserted the uninsulated conductor segment touches the inner electrically conductive layer (1 10) at an inner wall surface of the tubular electrical insulation device such that the inner electrically conductive layer (1 10) is on the same electric potential as the conductor segment in an operating state of the HV power transmission line each.