Semiconductor device structure and fabrication method thereof

Abstract

The invention provides a semiconductor device structure and a manufacturing method thereof. The structure includes: a substrate; a P-type semiconductor channel and an N-type semiconductor channel suspended on the substrate; a gate dielectric layer surrounding the P-type semiconductor channel and the N-type semiconductor channel. Semiconductor channel; gate electrode layer, surrounding the gate dielectric layer; P-type source region and P-type drain region, connected to both ends of the P-type semiconductor channel; N-type source region and N-type drain region, connected to the N-type semiconductor channel The two ends of the channel; wherein, the P-type ion doping concentration of the P-type semiconductor channel gradually decreases from the surface of the P-type semiconductor channel to the center, and the N-type ion doping concentration of the N-type semiconductor channel decreases from the N-type semiconductor channel. The surface of the channel gradually decreases toward the center, and the cross-sectional width of the P-type semiconductor channel is greater than that of the N-type semiconductor channel. The invention can realize multi-layer stacking of devices in a unit area, effectively shorten channel length, reduce short channel effect, and improve the load capacity of the device and the control ability of the gate to the channel.

Description

technical field [0001] The invention belongs to the design and manufacture of integrated circuits, in particular to a three-dimensional stacked junctionless gradient doped channel semiconductor device structure and a manufacturing method thereof. Background technique [0002] With the continuous development of semiconductor technology, the size of semiconductor devices is continuously reduced, the performance of driving current is continuously improved, and the power consumption is continuously reduced. production cost. [0003] Fin Field-Effect Transistor (FinFET) is a new complementary metal oxide semiconductor transistor. The shape of FinFET is similar to that of a fish fin. This design can improve circuit control and reduce leakage current, shortening the gate length of transistors. [0004] FinFET is an innovative design derived from the traditional standard transistor—Field-Effect Transistor (FET). In the traditional transistor structure, the gate can only control t...

AI Technical Summary

Problems solved by technology

However, when the channel length of the device enters the deep nanometer scale, the doping concentration of the source-drain abrupt PN junction of the traditional inversion channel device needs to change several orders of magnitude within a few nanometers. The realization of such a large concentration gradient is very important for doping technology. The design will bring great difficulties, and the manufacturing cost of these complex processes is very high, which affects the mass production of semiconductor devices

In addition, the limit size of the space charge region of the mutant PN junction is on the order of nanometers, so the existence of the mutant PN junction physically limits the further reduction of the channel length

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