Semiconductor device structure and fabrication method thereof

Abstract

The invention provides a semiconductor device structure and a manufacturing method thereof. The semiconductor device structure includes: a substrate; a P-type semiconductor channel suspended above the substrate; an N-type semiconductor channel suspended above the substrate The gate dielectric layer is surrounded by the P-type semiconductor channel and the N-type semiconductor channel; the gate electrode layer is surrounded by the gate dielectric layer; the P-type source region and the P-type drain region are respectively connected to the The two ends of the P-type semiconductor channel; and the N-type source region and the N-type drain region are respectively connected to the two ends of the N-type semiconductor channel; wherein, the cross-sectional width of the P-type semiconductor channel is greater than that of the N Type semiconductor channel cross-sectional width. The invention can realize multi-layer stacking of devices in a unit area, effectively shorten the channel length of the device, reduce the short channel effect, improve the load capacity of the device, and effectively improve the integration degree of the device.

Description

technical field [0001] The invention belongs to the design and manufacture of integrated circuits, in particular to a three-dimensional stacked junctionless semiconductor device structure and a manufacturing method thereof. Background technique [0002] With the continuous development of semiconductor technology, the size of semiconductor devices is continuously reduced, the performance of driving current is continuously improved, and the power consumption is continuously reduced. production cost. [0003] Fin Field-Effect Transistor (FinFET) is a new complementary metal oxide semiconductor transistor. The shape of FinFET is similar to that of a fish fin. This design can improve circuit control and reduce leakage current, shortening the gate length of transistors. [0004] FinFET is an innovative design derived from the traditional standard transistor—Field-Effect Transistor (FET). In the traditional transistor structure, the gate can only control the on and off of the cu...

AI Technical Summary

Problems solved by technology

However, when the channel length of the device enters the deep nanometer scale, the doping concentration of the source-drain abrupt PN junction of the traditional inversion channel device needs to change several orders of magnitude within a few nanometers. The realization of such a large concentration gradient is very important for doping technology. The design will bring great difficulties, and the manufacturing cost of these complex processes is very high, which affects the mass production of semiconductor devices

In addition, the limit size of the space charge region of the abrupt PN junction is on the order of nanometers, so the existence of the abrupt PN junction physically limits the further reduction of the channel length

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