Semiconductor device structure and fabrication method thereof

Abstract

This invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a subtract; a P-type semiconductor channel suspended on the subtract, a silicon-deuterium passivation layer on the P-type semiconductor channel; an N-type semiconductor channel suspended on the subtract, a silicon-deuterium passivation layer on the N-type semiconductor channel; a gate dielectric layer, wrapped around the P-type semiconductor channel and the N-type semiconductor channel; a gate electrode layer, wrapped around the gate dielectric layer; a P-type source region and a P-type drain region, connected to two ends of the P-type semiconductor channel respectively; an N-type source region and an N-type drain region, connected to two ends of the N-type semiconductor channel respectively; wherein a cross-sectional width of the P-type semiconductor channel is greater than that of the N-type semiconductor channel. The present invention has ability to realize multi-layer staking under unit area, and reducing the length of the channel effectively so as to reduce channel effect and improve carrying capacity and the reliability of the device.

Description

technical field [0001] The invention belongs to the design and manufacture of integrated circuits, in particular to a three-dimensional stacked junctionless passivation channel semiconductor device structure and a manufacturing method thereof. Background technique [0002] With the continuous development of semiconductor technology, the size of semiconductor devices is continuously reduced, the performance of driving current is continuously improved, and the power consumption is continuously reduced. production cost. [0003] Fin Field-Effect Transistor (FinFET) is a new complementary metal oxide semiconductor transistor. The shape of FinFET is similar to that of a fish fin. This design can improve circuit control and reduce leakage current, shortening the gate length of transistors. [0004] FinFET is an innovative design derived from the traditional standard transistor—Field-Effect Transistor (FET). In the traditional transistor structure, the gate can only control the ...

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Problems solved by technology

[0009] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a semiconductor device structure and its manufacturing method, which are used to solve the problem of insufficient power of the device in the prior art, the difficulty of further reducing the channel length and the low reliability of the device The problem

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