Semiconductor device structure and manufacturing method thereof

Abstract

The invention provides a semiconductor device structure and a manufacturing method thereof. The semiconductor device structure comprises a substrate, a first N-type semiconductor channel, and a secondN-type semiconductor channel. The channel width of the second N-type semiconductor channel and the channel width of the first N-type semiconductor channel are respectively determined by the transverse width of the second N-type semiconductor channel and the transverse width of the first N-type semiconductor channel in a semiconductor layer, so that the channel width of the second N-type semiconductor channel and the channel width of the first N-type semiconductor channel are continuously adjustable. The semiconductor device structure further comprises a first gate dielectric layer, a firstgate electrode layer, a first N-type source electrode, a first N-type drain electrode, a second gate dielectric layer, a second gate electrode layer, a second N-type source electrode and a second N-type drain electrode. According to the invention, the width of the second N-type semiconductor channel and the channel width of the first N-type semiconductor channel can be continuously adjusted; the design flexibility of a semiconductor memory device can be greatly improved; and the integration level and the performance of the device are improved.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit design and manufacture, and in particular relates to a semiconductor device structure and a manufacturing method thereof. Background technique [0002] With the continuous development of semiconductor technology, the size of semiconductor devices is continuously reduced, the performance of driving current is continuously improved, and the power consumption is continuously reduced. production cost. [0003] Fin Field-Effect Transistor (FinFET) is a new complementary metal oxide semiconductor transistor. The shape of FinFET is similar to that of a fish fin. This design can improve circuit control and reduce leakage current, shortening the gate length of transistors. [0004] FinFET is an innovative design derived from the traditional standard transistor—Field-Effect Transistor (FET). In the traditional transistor structure, the gate can only control the on and off of the current on one...

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Problems solved by technology

[0005] FinFET devices are usually fabricated based on fin-shaped semiconductor layers on a substrate. However, generally all fin-shaped semiconductor layers on a substrate have the same height. For this reason, the channel width of a FinFET device Limited by this height, the channel width can only be changed discretely, not continuously, which greatly reduces the flexibility of circuit design.

In addition, compared with planar gate type devices (planar gate type devices can continuously adjust their channel width), FinFET devices may cause certain layout due to design limitations (cannot continuously adjust channel width). loss, resulting in a reduction in circuit integration

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