Integrated photoelectric detection sensor, manufacturing method thereof and electronic equipment
A technology of photoelectric detection and electronic equipment, which is applied in the fields of electrical solid-state devices, semiconductor/solid-state device manufacturing, and circuits, etc., can solve problems such as internal signal crosstalk, improve overall performance, reduce internal signal lateral crosstalk, and achieve flexible and flexible process implementation methods tune effect
Pending Publication Date: 2021-12-28
北京易美新创科技有限公司
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Problems solved by technology
[0003] The purpose of the present invention is to provide an integrated photoelectric detection sensor, its manufacturing method, and electronic equipment to solve the problem that the integrated photoelectric detection sensor is prone to internal signal crosstalk in the prior art
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[0042] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0043] It should be noted that when a component is referred to as being “fixed on” or “disposed on” another component, it may be directly or indirectly located on the other component. When an element is referred to as being "connected to" another element, it can be directly or indirectly connected to the other element. The terms "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. The indicated orientation or position is based on the orientation or position shown in the drawings, and is only for conv...
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The invention relates to the technical field of semiconductors, and provides an integrated photoelectric detection sensor, a manufacturing method thereof and electronic equipment. The photoelectric detection sensor comprises a substrate, a first mounting position and a second mounting position are arranged on the upper surface of the substrate, a light emitting unit is fixed on the first mounting position, and a light signal receiving unit is fixed on the second mounting position; the first light shielding body covers the first mounting position, a first opening is formed in the top end of the first light shielding body, and glue can be injected into the inner area of the first light shielding body through the first opening to form a first protective glue layer; the second light shielding body covers the second mounting position, a second opening is formed in the top end of the second light shielding body, and glue can be injected into the inner area of the second light shielding body through the second opening to form a second protective glue layer; the first protective glue layer and the second protective glue layer respectively cover the light emitting unit and the light signal receiving unit and allow light signals of the light emitting unit to pass through; the light shielding part of the first light shielding body and the light shielding part of the second light shielding body are used for preventing light signals of the light emitting unit from passing through.
Description
technical field [0001] The invention relates to the technical field of semiconductors, and more specifically relates to an integrated photoelectric detection sensor, a manufacturing method thereof, and electronic equipment. Background technique [0002] With the rapid development of science and technology, the application of photoelectric reflective sensors is becoming more and more extensive, such as heart rate detection and blood oxygen detection in medical fields, and the use of distance proximity detection functions in service robots in various fields (such as sweeping robots, logistics robots, contactless Distribution robots, AGV unmanned handling robots, etc.). For long-distance detection sensors, the light emitting chip and the light signal receiving chip can generally be packaged separately, but with the development trend of integration and miniaturization, the existing integrated photoelectric detection sensors are prone to lateral crosstalk of internal signals, res...
Claims
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Login to View More IPC IPC(8): H01L23/552H01L25/16H01L23/31H01L21/50
CPCH01L23/552H01L25/167H01L23/3121H01L25/50
Inventor 刘丽铭申崇渝刘国旭
Owner 北京易美新创科技有限公司