Spin filtering magnetic tunnel junction, preparation method and equipment

Abstract

The invention provides a spin filtering magnetic tunnel junction. The spin filtering magnetic tunnel junction comprises a first magnetic layer, a tunneling layer and a second magnetic layer; the first magnetic layer is connected with the external electrode and is used for generating spinning current; the tunneling layer is arranged between the first magnetic layer and the second magnetic layer and is used for isolating the first magnetic layer from the second magnetic layer; and the second magnetic layer has antiferromagnetism so as to filter the spinning current. According to the invention, the second magnetic layer with antiferromagnetism is arranged, so spinning current can be filtered, and huge tunneling magnetic resistivity is realized. The invention also provides a preparation method and equipment of the spin filtering magnetic tunnel junction.

Description

technical field [0001] The invention relates to the technical field of data storage, in particular to a spin filter magnetic tunnel junction, a preparation method and a device. Background technique [0002] Today's memory is mainly based on semiconductor transistors. However, advanced integrated circuit manufacturing processes are restricted by quantum effects, resulting in leakage currents in semiconductors due to tunneling effects, and Moore's Law is failing. At the same time, storage devices based on spintronics, such as magnetic tunnel junctions, have been highly valued by the industry due to their advantages such as non-volatile storage, ultra-low power consumption, and high read and write times. Integrated circuits and information technology are of great significance in the post-Moore era, but the tunneling reluctance of the magnetic tunnel junction is not high enough, and the existing technology is still difficult to achieve industrialization. [0003] In the process...

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Problems solved by technology

[0002] Today's memory is mainly based on semiconductor transistors. However, advanced integrated circuit manufacturing processes are restricted by quantum effects, resulting in leakage currents in semiconductors due to tunneling effects, and Moore's Law is failing.

At the same time, storage devices based on spintronics, such as magnetic tunnel junctions, have been highly valued by the industry due to their advantages such as non-volatile storage, ultra-low power consumption, and high read and write times. Integrated circuits and information technology are of great significance in the post-Moore era, but the tunneling reluctance of the magnetic tunnel junction is not high enough, and the existing technology is still difficult to achieve industrialization

[0003] In the process of realizing the concept of the present disclosure, the inventors found that there are at least the following problems in the related art: the tunneling reluctance of the magnetic tunnel junction is not high enough; it is difficult to realize industrial production

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