Mode control semiconductor device and preparation method thereof

Abstract

The invention provides a mode control semiconductor device and a preparation method thereof, the mode control semiconductor device is provided with a front cavity surface and a rear cavity surface which are oppositely arranged, and the mode control semiconductor device comprises a semiconductor substrate layer, an active layer positioned on the semiconductor substrate layer, a first limiting layer and a second limiting layer located on the semiconductor substrate layer and located on the two sides of the active layer respectively, a first waveguide layer located between the first limiting layer and the active layer, a second waveguide layer located between the second limiting layer and the active layer, and having the thickness smaller than or equal to that of the first waveguide layer, and a first dimming layer located in the part, adjacent to the front cavity surface, of the second limiting layer; the refractive index of the first dimming layer is smaller than that of the second limiting layer, and the width of the first dimming layer is gradually increased in the direction from the rear cavity surface to the front cavity surface. According to the mode control semiconductor device, the optical catastrophe damage resistance threshold power of the front cavity surface is improved, and meanwhile, the coupling loss, the production process complexity and the cost are reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a mode control semiconductor device and a preparation method thereof. Background technique [0002] A light-emitting semiconductor device is a device that produces stimulated emission with a certain semiconductor material as a working substance. Its working principle is: through a certain excitation method, between the energy band (conduction band and valence band) of the semiconductor material, or Between the energy band of the material and the energy level of the impurity (acceptor or donor), the particle number inversion of the non-equilibrium carrier is realized. When a large number of electrons and holes in the particle number inversion state recombine, stimulated emission occurs Because of its small size and high electro-optical conversion efficiency, light-emitting semiconductor devices are widely used. [0003] The development direction of high-power light-emittin...

AI Technical Summary

Problems solved by technology

This increases the power density borne by the cavity surface of the light-emitting semiconductor device, leading to an increase in the failure of the cavity surface optical catastrophe damage of the light-emitting semiconductor device

[0004] At present, the existing technology cannot reduce the coupling loss, production process complexity and cost while improving the anti-optical catastrophe damage threshold power of the front cavity surface

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