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Half-bridge improved MMC sub-module topological structure and control method thereof

A topology and sub-module technology, applied in the direction of output power conversion device, power transmission AC network, electrical components, etc., can solve the problems of high cost and strict control requirements

Pending Publication Date: 2022-01-07
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The inventors of the present disclosure found that the half-bridge sub-module + DC circuit breaker scheme, although the high-voltage DC circuit breaker can realize 3ms to cut off the DC side fault, but the high-voltage DC circuit breaker used still has major problems such as high cost and strict control requirements; therefore , it is necessary to design a sub-module topology with the ability to automatically clear the DC side fault current

Method used

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  • Half-bridge improved MMC sub-module topological structure and control method thereof
  • Half-bridge improved MMC sub-module topological structure and control method thereof
  • Half-bridge improved MMC sub-module topological structure and control method thereof

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Embodiment 1

[0040] Such as figure 2 As shown, the present disclosure provides a half-bridge improved MMC sub-module topology, which is actually an improved half-bridge sub-module with DC fault ride-through capability.

[0041] Such as figure 1 and figure 2 As shown, on the basis of the existing half-bridge sub-module, two insulated gate bipolar transistors (Insulate-Gate Bipolar Transistor-IGBT) with anti-parallel diodes are added, specifically the third insulated gate bipolar transistor T 3 and a fourth IGBT T 4 , and two diodes, specifically the fifth diode D 5 and the sixth diode D 6 , wherein the third IGBT T 3 and the fourth IGBT T 4 Connected on the same branch in an anti-series manner, the fourth insulated gate bipolar transistor T 4 connected to the third IGBT T 3 and the cathode of capacitor C, the fifth diode D 5 Connected to the negative pole of the capacitor C and the second diode D 2 between the cathodes, the sixth diode D 6 Connected to the anode of capacitor C ...

Embodiment 2

[0047] Such as Figure 8 As shown, this embodiment provides a single-thyristor parallel-connected half-bridge improved MMC sub-module topology, specifically a single-thyristor parallel-connected half-bridge sub-module improved sub-module with DC fault ride-through capability.

[0048] Compared with the half-bridge sub-module connected in parallel with single thyristors, the improved sub-module of the half-bridge sub-module connected in parallel with single thyristors, in the second IGBT T 2 A third insulated gate bipolar transistor T is reversely connected in series on the branch 3 , only an IGBT is added, but compared with the full-bridge sub-module with DC fault ride-through capability, the use of an IGBT is reduced, so the cost performance is high.

[0049] When the system is running normally, such as Figure 8 As shown, the new sub-module can be used as a half-bridge sub-module; in this working state, the second insulated gate bipolar transistor T 3 It is always in the ...

Embodiment 3

[0054] The present embodiment provides a kind of control method of half-bridge improved MMC sub-module topology structure, has adopted half-bridge improved MMC sub-module topology structure as described in embodiment 1, comprises:

[0055] During normal operation, the third IGBT and the fourth IGBT are always on, and the sixth diode is turned off by reverse voltage; the first IGBT The pole transistor is turned on, and when the second insulated gate bipolar transistor is turned off, the sub-module is in the input state, and the sub-module provides voltage to the system. When the current is forward, the flow path is the first diode diode and the capacitor, and the current is reversed. When the current flow path is the capacitor and the first IGBT; when the first IGBT is turned off and the second IGBT is turned on, the submodule is in the cut-off state, and the submodule The voltage provided by the system is 0, the flow path of the current is the second insulated gate bipolar tra...

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Abstract

The invention provides a half-bridge improved MMC sub-module topological structure and a control method thereof. The half-bridge improved MMC sub-module topological structure comprises a first insulated gate bipolar transistor, a second insulated gate bipolar transistor of which the collector is connected with the emitter of the first insulated gate bipolar transistor, a third insulated gate bipolar transistor of which the emitter is connected with the emitter of the second insulated gate bipolar transistor, a fourth insulated gate bipolar transistor of which the collector is connected with the collector of the third insulated gate bipolar transistor, and a capacitor of which the negative electrode is connected with the emitter of the fourth insulated gate bipolar transistor; the positive electrode of the capacitor is connected with the collector of the first insulated gate bipolar transistor; a fifth diode is connected in parallel on a series branch of the capacitor and the first insulated gate bipolar transistor; and a sixth diode is connected in parallel on a series branch of the capacitor and the fourth insulated gate bipolar transistor. In a system response fault stage, an energy feedback path from an alternating current system to a short circuit point can be blocked, and direct current fault ride-through is realized.

Description

technical field [0001] The disclosure belongs to the technical field of modular multilevel converters, and in particular relates to a half-bridge improved MMC sub-module topology and a control method thereof. Background technique [0002] The proportion of new energy forms such as photovoltaic power generation and wind power in the power system is gradually increasing, and the proportion of new energy will inevitably maintain a strong growth momentum. Flexible DC transmission technology (VSC-HVDC) is a hot technology and key technology for new energy from the island system at the sending end to the load center at the receiving end. Since the concept of flexible direct current transmission was proposed in the last century, the research on related issues in the technical field has never stopped. According to the type of converter, it has experienced from two-level converters to multi-level converters to modular multi-power converters. The development history of leveling conve...

Claims

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Application Information

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IPC IPC(8): H02M7/219H02M1/088H02H7/26H02J3/36
CPCH02M7/219H02M1/088H02H7/268H02J3/36Y02E60/60
Inventor 王辉张涛郭柏
Owner SHANDONG UNIV