Forming method of resonator cavity film

Abstract

The invention discloses a forming method of a resonator cavity film, and relates to the field of semiconductor manufacturing. The forming method of the resonator cavity film comprises the following steps of: before growing amorphous silicon, forming a layer of 300A-1000A low-stress silicon dioxide film, and then forming a layer of 30A-150A low-deposition-rate silicon dioxide film; the problem that the surface of an amorphous silicon film on the upper layer of a silicon dioxide film of an existing resonator cavity is uneven is solved. And the effects of giving consideration to low stress and low deposition rate of silicon dioxide and improving the surface flatness and uniformity of the amorphous silicon film are achieved.

Description

technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular to a method for forming a resonator cavity thin film. Background technique [0002] Amorphous silicon is used in the manufacture of the cavity of the infrared resonator. In the manufacturing process, a layer of silicon dioxide film is formed before the formation of the amorphous silicon film. [0003] The stress matching between amorphous silicon and the substrate on which the silicon dioxide film is formed directly affects the flatness and uniformity of the cavity of the infrared resonator. At the same time, the surface state of the silicon dioxide film will affect the growth of amorphous silicon. However, it is difficult to balance low stress and low deposition rate, such as figure 1 As shown, y1<y2, y4<y3, x1<x2, the values ​​of y1, y2, y3, y4, x1, x2 are determined according to the actual situation, and Power VS Stress and Depo (deposition) Rate sho...

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Problems solved by technology

[0003] The stress matching between amorphous silicon and the substrate on which the silicon dioxide film is formed directly affects the flatness and uniformity of the cavity of the infrared resonator. At the same time, the surface state of the silicon dioxide film will affect the growth of amorphous silicon. However, it is difficult to balance low stress and low deposition rate, such as figure 1 As shown, y1<y2, y4<y3, x1<x2, the values ​​of y1, y2, y3, y4, x1, x2 are determined according to the actual situation, and Power VS Stress and Depo (deposition) Rate show the opposite trend

[0004] like figure 2 As shown, the silicon dioxide film formed at a high deposition rate will cause the surface roughness of the amorphous silicon film on it; as image 3 As shown, a highly stressed silicon dioxide film will lead to poor uniformity of the amorphous silicon film formed on it

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