Graphite boat for liquid phase epitaxy and use method of graphite boat

Abstract

The invention provides a graphite boat for liquid phase epitaxy and a use method of the graphite boat. The graphite boat for liquid phase epitaxy comprises a bottom support, a substrate tank, a mother liquor tank and an upper cover which are sequentially stacked, wherein a first through hole for placing a graphite cushion block and a substrate is formed in the substrate tank, and the height of the graphite cushion block in the first through hole is adjustable. The substrate tank is provided with a plurality of horizontal scale marks which are used for indicating the height and levelness of the graphite cushion block. By directly adjusting the height and levelness of the graphite cushion block, continuous and accurate change of the height of the graphite cushion block according to the height of the substrate and the thickness of a film is more efficiently achieved, a standard process is formed, it is guaranteed that the film is not scratched and mother liquor is not left, the processing cost for preparing multiple cushion blocks in the epitaxial process is reduced, operation is easy, and horizontal line indication is combined, so that the precision is higher.

Description

technical field [0001] The invention relates to a liquid phase epitaxial growth technology of a single crystal thin film, in particular to a graphite boat for liquid phase epitaxy and a use method thereof. Background technique [0002] Liquid phase epitaxy technology was proposed by Nelson et al. in 1963. The principle is: use low melting point metals (such as Ga, In, etc.) Zn, Te, Sn, etc.) are solutes, so that the solutes are saturated or supersaturated in the solvent. The solute in the graphite boat is precipitated from the solvent by cooling down, and a layer of crystal material whose crystal structure and lattice constant are sufficiently similar to the single crystal substrate, that is, a thin film, is directional grown on the single crystal substrate, so that the crystal structure can be continued. Realize the epitaxial growth of the crystal. [0003] After the film grows to a certain thickness, it is necessary to separate the remaining liquid solvent from the film ...

AI Technical Summary

Problems solved by technology

[0008] The technical problem to be solved by the present invention is how to more efficiently solve the problem that the film is easily scratched or a large amount of mother liquid remains on the surface when separating the remaining liquid mother liquid from the film after liquid phase epitaxy

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