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Oxide layer removing method and semiconductor processing equipment

A processing equipment, oxide layer technology, applied in the field of cleaning, can solve the problem of not being able to achieve 1:1

Inactive Publication Date: 2022-01-25
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] First, for the removal of the natural oxide layer with low etching amount, SiO 2 and Si 3 N 4 The etching selection ratio cannot reach 1:1
[0008] Second, for the oxide layer etching back process with high etching amount, in order to obtain better bowl effect and differential effect, it is necessary to increase the number of cycles of the oxide layer removal method, but this will lead to SiO 2 and Si 3 N 4 The etch selectivity ratio is much greater than 1

Method used

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  • Oxide layer removing method and semiconductor processing equipment
  • Oxide layer removing method and semiconductor processing equipment
  • Oxide layer removing method and semiconductor processing equipment

Examples

Experimental program
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Effect test

no. 1 example

[0038] see figure 1 , the method for removing the oxide layer provided in this embodiment includes the following steps:

[0039] S1, oxidize the layer to be processed to form a specified oxide layer;

[0040] S2. Etching the layer to be processed having the designated oxide layer.

[0041] Performing the above step S1 and step S2 in a cycle until the preset total etching thickness is reached;

[0042] Wherein, by adjusting the thickness of the specified oxide layer obtained in step S1, the etching selectivity ratio between the specified oxide layer and the layer to be processed in step S2 reaches a preset ratio. In practical applications, the thickness of a specified oxide layer can be adjusted by adjusting the reaction temperature and / or oxidation time.

[0043] The oxide layer removal method provided in this embodiment adds an oxidation step S1 before the etching step S2. By adjusting the thickness of the specified oxide layer, the specified oxide layer and the layer to b...

no. 2 example

[0055] see figure 2 , the oxide layer removal method provided in this embodiment includes the following steps:

[0056] S1, oxidize the layer to be processed to form a specified oxide layer;

[0057] S2, etching the layer to be processed having the designated oxide layer;

[0058] S3, performing an annealing process on the layer to be processed to remove solid products and adsorption products;

[0059] S4, judging whether the total etching thickness has been reached, if yes, then end the process; if not, return to step S1.

[0060] By performing step S3 once after each step S2 is completed, that is, an annealing process, solid products and adsorption products on the layer to be processed can be removed, thereby further improving the cleaning effect.

no. 3 example

[0062] see image 3 , the semiconductor processing equipment provided in this embodiment, which is used to perform the methods for removing the oxide layer provided in the above-mentioned embodiments of the present invention. The semiconductor processing equipment includes at least one process chamber 1, an oxidation chamber 2 and an annealing chamber 3, wherein the process chamber 1 is used to etch a layer to be processed having a specified oxide layer. image 3 Four process chambers 1 are shown, and by arranging multiple process chambers 1 , multiple etching steps can be performed simultaneously, thereby improving productivity. The oxidation chamber 2 is used to oxidize the layer to be processed. The annealing chamber is used for annealing the layer to be processed.

[0063] In the semiconductor processing equipment provided in this embodiment, by adding an oxidation chamber 2, an oxidation step can be added before the step of etching the oxide layer using the process cham...

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Abstract

The invention provides an oxide layer removing method and semiconductor processing equipment, and the oxide layer removing method comprises the following steps: S1, carrying out the oxidation of a to-be-processed layer, so as to form a specified oxide layer; S2, etching the to-be-processed layer with the specified oxide layer and cyclically carrying out the step S1 and the step S2 until the preset total etching thickness is reached, wherein the thickness of the specified oxide layer obtained in the step S1 is adjusted, so that the etching selection ratio of the specified oxide layer to the layer to be processed in the step S2 reaches a preset ratio. According to the technical scheme of the oxide layer removal method and the semiconductor processing equipment provided by the invention, the etching selection ratio of the specified oxide layer to the to-be-processed layer can reach the preset ratio, and the requirement of the process on the etching selection ratio is met.

Description

technical field [0001] The invention relates to the technical field of cleaning, in particular to a method for removing an oxide layer and semiconductor processing equipment. Background technique [0002] With the application of template cleaning and multiple pattern exposure cleaning, the demand for cleaning has increased sharply, and the requirements for cleaning have become higher and higher, especially for the etching selection ratio between thermally grown silicon dioxide and various film layers. . For example, after removing Si 3 N 4 when the natural oxide layer on the SiO 2 and Si 3 N 4 The etch selectivity ratio is 1:1. When performing a high etch-amount oxide layer etch-back process, it is necessary to ensure that SiO 2 and Si 3 N 4 While the etching selection ratio is 1:1, the etching morphology also needs to meet the requirements, that is, to reduce the bowl effect (footing) and differential effect (loading). [0003] The existing oxide layer removal met...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/67
CPCH01L21/67069H01L21/0206H01L21/02049
Inventor 王晓娟马振国郑波
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD