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Terahertz wave reading circuit

A readout circuit and terahertz technology, which is applied in the field of terahertz wave readout circuit, can solve the problems of weak terahertz wave, submersion, high changing frequency and difficult capture, etc., and achieve the effect of high sensitivity

Pending Publication Date: 2022-01-28
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The terahertz waves detected by the existing technology are usually very weak, easily overwhelmed by 1 / f noise and white noise, and the changing frequency is too high to be captured
Ideally, as long as there is an optical radiation signal, the detection circuit can be used to detect the signal, but when the detected signal is very weak, the signal often cannot be detected. Therefore, the design structure is simple, the adaptability is strong, The terahertz wave readout circuit with low noise, high linearity and high sensitivity has great research significance

Method used

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  • Terahertz wave reading circuit
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Embodiment Construction

[0056] In order to make the objects, technical solutions and advantages of the present disclosure, the present disclosure will be described in detail below with reference to the accompanying drawings.

[0057]Incidentally, in the drawings or described in the specification, like parts are similar or the same numbers in FIG. Technical features in the premise without conflict can be freely combined to form a new program each specification exemplary embodiment, each claim may additionally as a separate technical features of the respective claims or embodiments may be combined as a new embodiments, and the drawings, embodiments of the shape or thickness of the embodiment can be expanded, and to simplify or facilitate marking. Further, elements shown in the drawings or described implementations, or not drawn, known to the art in the form of ordinary skill in the art. Further, although exemplary parameters provided herein can contain a specific value, it should be appreciated that the pa...

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Abstract

The invention provides a terahertz wave reading circuit, which comprises: a detector model (A) used for simulating an input terahertz modulation light current signal to obtain a first analog signal and demodulating and sampling the first analog signal to obtain a sampling signal; an integral amplification module (B) used for performing integral amplification on the sampling signal to obtain an amplified signal; an integral signal sampling module (C) used for collecting the terahertz signal value of the amplified signal in an integral period to obtain a sampling integral signal; and an analog-to-digital conversion module (D) used for converting the sampling integral signal into a digital signal, wherein the sampling signal and the simulated terahertz light current signal have phase deviation. The reading circuit disclosed by the invention can effectively detect and amplify weak terahertz wave signals, and realizes accurate detection of weak terahertz waves in TOF imaging.

Description

Technical field [0001] TOF present disclosure relates to imaging technology, and more particularly, to a terahertz wave readout circuitry. Background technique [0002] TOF (Time of Flight, TOF) imaging technology for obtaining distance information estimated by the time of flight of light. It refers to the terahertz wave and millimeter-wave bands between the far-infrared light, a frequency in the range of electromagnetic wave 0.1THz ~ 10THz. Terahertz-wave signal as the last window in the electromagnetic spectrum of research, combined with its many unique properties, has important significance. [0003] The prior art generally detect terahertz waves is weak and susceptible to 1 / f noise and white noise using, and changes too frequently difficult to capture. Ideally, as long as the optical signal radiation, the detection circuit can use the detected signal, but when the detected signal is very weak, often the signal undetectable occurs, and therefore, the structure is simple desi...

Claims

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Application Information

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IPC IPC(8): G01S17/894G01S7/4865G01S7/4915G01J1/42
CPCG01S17/894G01S7/4865G01S7/4915G01J1/42
Inventor 刘敏刘力源刘剑吴南健
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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