Testing method of semiconductor structure

Abstract

The invention provides a testing method of a semiconductor structure. The method comprises the following steps of: providing an actual test result of a plurality of parameters of the semiconductor structure, wherein the plurality of parameters comprise selected parameters and related parameters; acquiring a prediction test result of the selected parameters based on a prediction model; judging whether the actual test result and a predicted test result of the selected parameters are in a preset range or not; if both the results are within or not within the preset range, determining that the test result of the selected parameters is normal; and if only one of the two results is within the preset range, determining that the test result of the selected parameters is abnormal, and re-testing the selected parameters of the semiconductor structure. According to the testing method, the predicted test result of the selected parameters is compared with the actual test result to diagnose the actual test result, so that the test is accurate, the diagnosis of the test result of the semiconductor structure can be quickly realized, the overall retest rate can be reduced, the condition that the actual test result is consistent but the prediction test result is not consistent can be screened out, and unqualified products are prevented from flowing downstream.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a method for testing a semiconductor structure. Background technique [0002] WAT (Wafer acceptance test, Wafer Acceptance Test) is an electrical measurement (WAT electrical parameter test) of the wafer after the process is completed and before shipment. It is used to check whether each process process meets the standard. The test items include Device characteristic test, capacitance test, contact resistance test, breakdown test, etc. [0003] In the existing technology, such as figure 1 As shown, after completing the first test of the wafer WAT electrical parameters and obtaining the actual test results, retest and screen the unqualified WAT electrical parameters in the actual test results to reduce the impact of test errors on the wafer yield. Influence, while the WAT electrical parameters shown as qualified in the actual test results are directly regarded as qualified...

AI Technical Summary

Problems solved by technology

[0004] In practice, since each wafer needs to test thousands of WAT electrical parameters, it is inevitable that a wafer contains WAT electrical parameters with unqualified test results, and the test accuracy of existing testing machines is difficult to achieve. In the case of 100%, it is difficult to distinguish whether the unqualified test result is the unqualified WAT electrical parameter or the test error in the existing technology, which leads to the high retest rate of WAT test, which seriously affects the production capacity of WAT test (test machine)

On the other hand, the misplacement in the existing WAT process (the first test result shows that it is qualified but the actual failure is regarded as qualified) also has a relatively large adverse impact on subsequent shipments to the client

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