Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Optical proximity correction mask method based on adaptive hybrid conjugate gradient descent

A technology of optical proximity correction and conjugate gradient, which is applied in optics, components for photomechanical processing, and photomechanical equipment, etc., to achieve the effect of excellent mask quality, large solution space, and resistance to process deviations

Pending Publication Date: 2022-02-01
智腾科技股份有限公司
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The iterative efficiency of this method and the quality of the final printed image produced by the mask plate still have sufficient room for improvement

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Optical proximity correction mask method based on adaptive hybrid conjugate gradient descent
  • Optical proximity correction mask method based on adaptive hybrid conjugate gradient descent
  • Optical proximity correction mask method based on adaptive hybrid conjugate gradient descent

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0076] The technical solution of the present invention will be described in detail in conjunction with the accompanying drawings and specific examples.

[0077] Adaptive mixed conjugate gradient decreased optical approximation mask method, including steps as follows:

[0078] Step 1, enter the target picture z t ,like figure 1 Strun, lithography 1 , ..., h k And corresponding weight coefficient μ 1 , ..., μ k ;

[0079] Step 2, initialization;

[0080] Step 2.1, the mask version is initialized to be with the target picture Z t The same shape, and calculate the initial level set function φ 0 , Calculate φ 0 Geometric gradient Photoresist model lithography intensity threshold TH I = 0.225.

[0081] Step 2.2 After the photolithography simulation is obtained, the initial loss function f is obtained. 0 , Calculate the initial loss function gradient g 0 ;

[0082] F = αf epe + βf pvb

[0083] Where f is an optimized loss function, α, β are EPE loss functions, PVBAND loss function; to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of chip manufacturing, and provides an optical proximity correction mask method based on adaptive hybrid conjugate gradient descent. The method provides a self-adjustable hybrid conjugate gradient descent strategy. According to the invention, the step length and the direction of gradient search are automatically adjusted by guiding a conjugate gradient method which is specifically adopted in a next cycle correction process by utilizing experience of a previous cycle, so that an optimal solution is better searched. The solution space is larger, and the newly designed optimization function can enable the quality of the generated mask to be better; a photoetching acceleration model is realized, and the algorithm efficiency is high; and the generated mask can more effectively resist process deviation. The chip manufacturing mask is optimized, so that the pattern after photoetching has higher fidelity.

Description

Technical field [0001] The present invention belongs to the field of chip fabric, and is directed to an optical adjacent correction mask method based on adaptive mixed conjugate gradient decreases. Background technique [0002] As the characteristic size of the integrated circuit process is constantly decreasing, existing manufacturing technology faces great challenges. Since the graphical size of the circuit is similar to the light source wavelength used by the lithographic process, the interference effect will inevitably produce, resulting in a photolithography graphic distortion, which in turn affects the integrated circuit manufacturing capacity. The application of resolution enhancement technology is a key step in improving production capacity. Optical Near Correction is the most core resolution enhancement technology. During the optical approach correction, the graphics on the mask to be processed will be adjusted to achieve the effect of compensating for optical scattering...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36G03F7/20
CPCG03F1/36G03F7/70441G03F7/70508
Inventor 虞子阳
Owner 智腾科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com