Large-field-angle light-emitting diode chip and manufacturing method thereof
A light-emitting diode and chip technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of axial light intensity, weak LED side light emission, and limited viewing angle of the display screen, and achieve the effect of increasing the ratio
Active Publication Date: 2022-02-25
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology
[0004]
However, the existing LED chip structure has the problem of strong axial light, that is, the LED chip has a strong luminous intensity in the vertical direction, and when it is far away from the vertical direction, the luminous intensity decreases significantly, and the luminous intensity on the side of the LED is weak, resulting in Display viewing angle becomes limited
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[0041] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.
[0042] figure 1 It is a schematic structural diagram of a large-angle light-emitting diode chip provided by an embodiment of the present disclosure, as shown in figure 1 As shown, the large-angle LED chip includes a substrate 1 , an N-type semiconductor layer 2 , an active layer 3 , a P-type semiconductor layer 4 , an N-type electrode 5 , a P-type electrode 6 , an insulating layer 7 and a protective layer 8 . The N-type semiconductor layer 2 , the active layer 3 and the P-type semiconductor layer 4 are sequentially stacked on the first surface 1 a of the substrate 1 . The P-type semiconductor layer 4 is provided with a groove extending to the N-type semiconductor layer 2 , the N-type electrode 5 is arranged on the N-type semicondu...
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Abstract
The invention provides a large-field-angle light emitting diode chip and a manufacturing method thereof, and belongs to the technical field of semiconductors. An insulating layer of the large-field-angle light-emitting diode chip comprises a passivation layer and a distributed Bragg reflection layer which are sequentially stacked, the passivation layer is a silicon oxide layer, and the distributed Bragg reflection layer comprises silicon oxide layers and titanium oxide layers which are alternately stacked; a plurality of grooves are formed in the face, making contact with the distributed Bragg reflection layer, of the passivation layer, the bottom face of each groove is an inclined face, the inclination angle alpha of each inclined face is larger than or equal to 20 degrees and smaller than or equal to 40 degrees. According to the large-field-angle light emitting diode chip, the proportion of lateral light can be improved, the field angle of the LED chip is increased, and a good light shape is obtained.
Description
technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a large-angle light-emitting diode chip and a manufacturing method thereof. Background technique [0002] A light emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor device that can emit light. By using different semiconductor materials and structures, LEDs can cover a full color range from ultraviolet to infrared, and have been widely used in economic life such as display, decoration, and communication. [0003] The chip is the core device of the LED. In related technologies, the LED chip includes a substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, an N-type electrode, a P-type electrode, an insulating layer, and a protective layer; the N-type semiconductor layer, The active layer and the P-type semiconductor layer are sequentially stacked on the first surface of the substrate; the P-type ...
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IPC IPC(8): H01L33/44H01L33/46H01L33/00
CPCH01L33/44H01L33/46H01L33/007H01L2933/0025
Inventor 兰叶王江波朱广敏
Owner HC SEMITEK ZHEJIANG CO LTD